Modeling & Simulation of Microsystems – Page 20

An Algorithm for the Inclusion of RC Compact Models of Packages into Board Level Thermal Simulation Tools

Rencz M., Székely V., Courtois B., TIMA-CMP, FR

The paper presents an algorithm for the co-simulation of packages, given with the RC compact models, and the printed circuit boards. This enables beyond the correct detailed consideration of the heat transfer in the board [...]

Compact Thermal Model for Transient Temperature Fields in Electronic Systems

Gerstenmaier Y.C., Wachutka G., Münich University of Technology, DE

A thermal model is presented, which describes the evolution of the temperature distribution in electronic systems. Introducing a set of deliberately chosen effective time constants, the time dependence is given by convolution integrals with the [...]

Circuit Simulation

A Comprehensive Modeling of MOS Transistors in a 0.35um Technology for Analog and Digital Applications

Keshavarz A., Khare P., Sampson R., STMicroelectronics, US

The purpose of this work is to present a comprehensive report of the MOS transistor characteristics in a 0.35um technology, both types being surface devices. Results include extensive geometrical and temperature dependencies of the most [...]

Capacitance-Voltage Characteristics of Metal-Oxide-Strained Semiconductor Si/SiGe Heterostructures

Cavassilas N., Autran J-L, CNRS, FR

We present theoretical investigation of mechanical strain-induced effects in metal-oxide-semiconductor (MOS) structures from an electrical point-of-view. In this work, we start by calculating the strained semiconductor band-structure using a k.p approach over the complete Brillouin [...]

Study of Electron Transport in SOI MOSFETs using Monte Carlo Technique with Full-Band Modeling

Takeda H., Mori N., Hamaguchi C., Osaka University, JP

In SOI MOSFETs, electrons are quantized into two-dimensional electron gas by the strong electric field normal to the interface. When the Si-layer thickness is thinner than the inversion layer width, the confinement becomes stronger and [...]

A New Lateral Trench Sidewall Schottky (LTSS) Rectifier on SOI

Singh Y., Kumar M.J., Indian Institute of Technology, IN

In this paper, a new Schottky rectifier structure, called Lateral Trench Sidewall Schottky (LTSS) rectifier on SOI is presented. Based on two-dimensional simulations, we demonstrate that the proposed device is superior in performance as compared [...]

An Investigation on Modeling and Statistical Simulation of Si-Ge Heterojunction Bipolar Transistors for Characterizing Their Dependence on Germanium Content

Sipahi L.B., Sanders T.J., Florida Institute of Technology, US

Although silicon is by far the most widely utilized manufactured semiconductor material, it is very poor in terms of mobilities of holes and electrons, which give rise to unacceptable low operation speeds. Far higher charge-carrier [...]

Modeling, Simulation and Comparative Analysis of RF Bipolar and MOS Low Noise Amplifiers for Determining Their Performance Dependence on Silicon Processing

Sipahi L.B., Sanders T.J., Florida Institute of Technology, US

In this study, an investigation into MOS (metal-oxide semiconductor) and bipolar LNAs (Low Noise Amplifiers) in terms of their circuit design and the electrical circuit parameters was conducted. As partially reported [1], we have been [...]

Two-Dimensional Simulation of Surface-State Effects on Breakdown Characteristics of Narrowly-Recessed-Gate GaAs MESFETs

Mitani Y., Wakabayashi A., Horio K., Shibaura Institute of Technology, JP

Effects of surface states on breakdown characteristics of narrowly-recessed-gate GaAs MESFETs are studied by two-dimensional simulation. Particularly, it is discussed how the characteristics depend on the surface-state densities and on the recess structure parameters. It [...]