MEMS & NEMS Devices, Modeling & Applications – Page 48

A Technology-Independent Model for Nanoscale Logic Devices

Frank M.P., University of Florida, US

In this paper we describe a class of technology-independent nano-device models, motivated from fundamental physical considerations, and give some examples of their applications in nanocomputer architecture and systems engineering. These models rest on recent insights [...]

Full-band Particle-based Simulation of Germanium-On-Insulator FETs

Beysserie S., Branlard J., Aboud S., Goodnick S.M., Thornton T., Saraniti M., Illinois Institute of Technology, US

We model and simulate novel fully depleted (FD) sub-50nm gate lengths MOSFET structures using a full-band particle simulator based on the Cellular Monte Carlo (CMC) method that provides an accurate transport model at the high [...]

Methodology for Prediction of Ultra Shallow Junction Resistivities Considering Uncertainties with a Genetic Algorithm Optimization

Renard C., Scheiblin P., de Crécy F., Ferron A., Guichard E., Holliger P., Laviron C., CEA-LETI, FR

The accurate prediction of arsenic activation after spike annealing is mandatory for Ultra Shallow Junction (USJ) sheet resistance optimization for advanced NMOS transistors engineering. For the first time, we propose a fast and efficient methodology [...]

Impact of Quantum Mechanical Tunnelling on Off-leakage Current in Double-gate MOSFET using a Quantum Drift-diffusion Model

Jaud M-A, Barraud S., Le Carval G., CEA-LETI, FR

With the growing use of wireless electronics systems, off-state leakage current in MOSFETs appears as one of the major physical limitations. Measurements of quantum tunnel current between source-drain (S?D) have recently shown that it will [...]

Nano Scale Device Modeling

Smart, Intelligent and Cogent Microsensors – Intelligence for Sensors and Sensors for Intelligence

Gaura E., Newman R.M., Coventry University, UK

The paper develops a terminology to describe sensors which have been enhanced in some way by the integration of some additional processing circuitry. Several terms, current in the literature, including 'smart sensors' and 'intelligent sensors' [...]

Modeling and Practial Verification of the Ionophore Based Chemically Modified Field Effect Transistor

Daniel M., Szermer M., Janicki M., Napieralski A., DMCS, Technical University of Lodz, PL

Proper CAD design of electronic microsystems oriented for environment monitoring requires accurate models of various sensors, which would be compatible with the existing behavioral simulators. In this paper the analysis of the ion sensitive transistor [...]

Macromodel of Intelligent Sensor Structure with Accelometer

Husak M., Jakovenko J., Kulha P., Novak J., Janicek V., Czech Technical University in Prague, CZ

The paper describes conceptual approach to the design of a tilt structure determined for integration on a chip. An accelerometer for measurement of inclination in x and y axes is used as a sensor. There [...]

Electrostatic Tuning of a Micro-Ring Gyroscope

Gallacher B.J., Hedley J., Burdess J.S., Harris A.J., Rickard A., King D., Insat University of Newcastle, UK

This paper describes a procedure for identifying and correcting anisoinertia and anisoelasticity present in a micro-ring gyroscope. The major disadvantages of popular tuning methods such as mass trimming using laser ablation or focussed ion beam [...]

Resonant Frequency Shift of Torsional Acutators due to Electrostatic Force

Xiao Z., Sun Y., Li B., Lee S., Sidhu K.S., Chin K.K., Farmer K.R., New Jersey Institute of Technology, US

We have investigated the effect of natural frequency shift in single-crystal silicon, rectangular, electrostatic torsion actuators due to the electrostatic force. The electrostatic actuator was fabricated by using ultra-thin silicon wafer, SU-8 thermal compression bonding, [...]