Impact of Quantum Mechanical Tunnelling on Off-leakage Current in Double-gate MOSFET using a Quantum Drift-diffusion Model

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With the growing use of wireless electronics systems, off-state leakage current in MOSFETs appears as one of the major physical limitations. Measurements of quantum tunnel current between source-drain (S?D) have recently shown that it will become detrimental in bulk MOSFET architecture for channel length around 5nm and at low temperature (£100K). After a careful validation of quantum drift-diffusion model (QDDM), we present a systematic study of the impact of source-drain direct tunnelling on off-state leakage current in double-gate MOSFET architectures. A large range of temperature (100K<T<Lc<tsi

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Journal: TechConnect Briefs
Volume: 2, Technical Proceedings of the 2004 NSTI Nanotechnology Conference and Trade Show, Volume 2
Published: March 7, 2004
Pages: 17 - 20
Industry sector: Advanced Materials & Manufacturing
Topics: MEMS & NEMS Devices, Modeling & Applications, Nanoelectronics
ISBN: 0-9728422-8-4