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HomeTopicsMEMS & NEMS Devices, Modeling & Applications

Topic: MEMS & NEMS Devices, Modeling & Applications

Guidelines of Creating Krylov-subspace Macromodels for Lateral Viscous Damping Effects

Yen P-C, Yang Y-J, National Taiwan University, TW
It is well known that modeling 3-D lateral viscous damping effects requires considerable computational resources. Therefore, earlier works on lateral viscous damping were based on the 1-D analytical Stokes and Couette flow solutions [1,2]. Recently, [...]

MEMS Compact Modeling Meets Model Order Reduction: Examples of the Application of Arnoldi Methods to Microsystem Devices

Lienemann J., Billger D., Rudnyi E.B., Greiner A., Korvink J.G., IMTEK, Albert Ludwig University, DE
Modeling and simulation of the behavior of a system consisting of many single devices is an essential requirement for the reduction of design cycles in the development of microsystem applications. Analytic solutions for the describing [...]

Characterization of an Electro-thermal Microactuator with Multi-lateral Motion in Plane

Pan C.H., Chen Y.K., Chang C.L., National Chin-Yi Institute of Technology, TW
We present a new electro-thermal microactuator to have multi-lateral motion in plane by only varying voltage potentials at the contact pads. To extend the operating function, the larger operating range or multi-mode switch, relay and [...]

Modeling, Fabrication and Experiment of a Novel Lateral MEMS IF/RF Filter

Motiee M., Khajepour A., Mansour R.R., University of Waterloo, CA
MEMS based mechanical resonators and filters have shown promising characteristics in achieving high Q values and good stability. This paper introduces a novel V-shape coupling element that is used to mechanically couple two clamped-clamped MEMS [...]

Using Topology Derived Masks to Facilitate 3D Design

Schiek R., Schmidt R., Sandia National Laboratories, US
To accelerate MEMS design for surface micromachining applications, an algorithm and associated design tool have been created which translates designers’ 3D models into 2D lithographic production masks. Typically, designing a surface micromachined, MEMS device requires [...]

Dynamic Simulations of a Novel RF MEMS Switch

Younis M.I., Abdel-Rahman E.M., Nayfeh A.H., Virginia Tech, US
We present a dynamic analysis of a novel RF MEMS switch utilizing the dynamic pull-in phenomenon. We study this phenomenon and present guidelines about its mechanism. We propose to utilize this phenomenon to design a [...]

Piecewise Perturbation Method (PPM) Simulation of Electrostatically Actuated Beam with Uncertain Stiffness

Juillard J., Baili H., Colinet E., SUPELEC, Department of Measurement, FR
We present a new approach to the simulation of uncertainties in micro-electromechanical systems, based on the same principle as perturbation methods. This approach is valid for large variations of the uncertainties and requires much less [...]

mor4ansys: Generating Compact Models Directly From ANSYS Models

Rudnyi E.B., Lienemann J., Greiner A., Korvink J.G., IMTEK, Albert Ludwig University, DE
Model reduction of linear large-scale dynamic systems is already quite an established area [1]–[3]. In a number of papers (see references in [3]), the advantages of model reduction have been demonstrated. In the present paper, [...]

Finite Element Validation of an Inverse Approach to the Design of an Electrostatic Actuator

Juillard J., Cristescu M., Guessab S., SUPELEC, Department of Measurement, FR
We present an approach to the design of electrostatically-actuated micro-structures and discuss its implementation in a software tool called IDEA. The main advantage of this approach is that it considerably reduces problems associated to coupling [...]

Analytical Model for the Pull-in Time of Low-Q MEMS Devices

Rocha L.A., Cretu E., Wollfenbuttel R.F., Delft University of Technology, NL
A meta-stable transient region just beyond pull-in displacement that ultimately governs the pull-in time in critically damped systems is identified in this paper. Since the pull-in displacement time is basically governed by this second region [...]

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