Dynamic Simulations of a Novel RF MEMS Switch

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We present a dynamic analysis of a novel RF MEMS switch utilizing the dynamic pull-in phenomenon. We study this phenomenon and present guidelines about its mechanism. We propose to utilize this phenomenon to design a novel RF MEMS switch, which can be actuated by a voltage load as low as 40% of the traditionally used static pull-in voltage. The switch is actuated using a combined DC and AC loading. The AC loading can be tuned by altering its amplitude and/or frequency to reach the pull-in instability with the lowest driving voltage and fastest response speed. The new actuation method can solve a major problem in the design of RF MEMS switches, which is the high deriving voltage requirement

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Journal: TechConnect Briefs
Volume: 2, Technical Proceedings of the 2004 NSTI Nanotechnology Conference and Trade Show, Volume 2
Published: March 7, 2004
Pages: 287 - 290
Industry sector: Sensors, MEMS, Electronics
Topics: MEMS & NEMS Devices, Modeling & Applications
ISBN: 0-9728422-8-4