Informatics, Modeling & Simulation – Page 47

A New Grounded Lamination Gate (GLG) SOI MOSFET for Diminished Fringe Capacitance Effects

Kumar M.J., Venkataraman V., Gupta S.K., Indian Institute of Technology, IN

In this paper, we propose a novel device structure, known as the Grounded Laminated Gate (GLG) SOI MOSFET to eliminate the gate fringe field effects on the threshold voltage of short channel SOI MOSFETs. Our [...]

FEA Simulation of Thin Film Coils to Power Wireless Neural Interfaces

Kim S., Scholz O., Zoschke K., Harrison R., Solzbacher F., Klein M., Toepper M., Fraunhofer Institute for Biomedical Engineering, DE

To wirelessly transfer energy into active biomedical devices such as neural stimulators or bio-monitors implanted in the body, magnetic coupling of a pair of coils has been commonly used. The growing demand for highly miniaturized [...]

Solving Electric Field in Combined Conductor and Dielectric Devices

Chen Z.J., Przekwas A., Athavale M., Zhou N., CFD Research Coorporation, US

In the design and simulation of micro/nano device areas, it becomes more and more important to obtain, fast and accurate, transient electric field solutions in combined conductor/dielectric materials. The time characteristics for such transient process [...]

Impacts of High-k Offset Spacer on 65-nm Node SOI Devices

Ma M-W, Chao T-S., Kao K-S, Huang J-S, Lei T-F, National Chiao Tung University, TW

In this paper, the 65-nm node SOI devices with high-k offset spacer was investigated. Calculated results show that the high-k offset spacer can effectively increase Ion and reduce Ioff due to the high vertical fringing [...]

Virtual Reality approach for nanoparticles tracking using simulated forces

Ikonomov P.G., Ghantasala M.K., Western Michigan University, US

In this paper we propose a VR approach to track the nanoparticle movement using simulated forces. As a first step in this direction we have considered the representation of the interaction between nanoparticles and Atomic [...]

Minimized atomistic model (MAM) of BmIn cluster and the effect of Ge pre-amorphization implant (Ge-PAI) on boron diffusion

Yoo J-H, Yoon K-S, Hwang C-O, Yoon K-S, Kim J-S, Won T., School of Engineering, National IT Research Center for Computational Electronics, Inha University, KR

In this paper, we report on our minimized atomistic model (MAM) composed of the evolution path from B2I to B3I for describing kinetic Monte Carlo (KMC) in boron diffusion. MAM, which is based on the [...]

Modeling microdrop motion between covered and open regions of EWOD microsystems

Berthier J., Clementz Ph., Roux J-M, Fouillet Y., Peponnet C., CEA-LETI, FR

Digital microfluidics is a promising way to manipulate biological targets like DNA, proteins or cells in very small liquid volumes. The advantages of such devices are the use of lesser quantities of costly reagents, better [...]

Designing Opto-Electronic Nanomaterials Using First Principles Simulations

Williamson A.J., Lawrence Livermore National Laboratory, US

The results of recent first principles simulations of the structural and opto-electronic of semiconductor nanomaterials will be presented. We will show how the opto-electronic properties of silicon nanomaterials can be controlled by altering their size, [...]

Phonon Scattering in Doped Silicon by Molecular Dynamics Simulation

Yao M., Watanabe T., Phillpot S.R., Schelling P.K., Keblinski P., Cahill D.G., University of Florida, US

Molecular dynamics simulation is used to study the scattering of phonon wave packets of well–defined frequency . The simulation system is 22 unit cells in the direction normal to phonon propagation and 3000 unit cells [...]

New One-Particle Monte Carlo Method for Nanoscale Device Simulation

Brugger S.C., Schenk A., Swiss Federal Institut of Technology, CH

A new one-particle Monte Carlo iteration scheme has been found toself-consistently take into account generation-recombinationprocesses. The basic idea is to couple the BTE not only with thePoisson equation, but also with the continuity equation by [...]