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HomeTopicsInformatics, Modeling & Simulation

Topic: Informatics, Modeling & Simulation

Simulation of Droplet Based Microfluidics Devices using a Volume of Fluid (VOF) Approach

Chandorkar A., Palit S., Flow Science, US
This paper demonstrates that CFD simulations can be used to study important physical phenomena in Droplet based Microfluidics Devices. The Volume of Fluid (TruVOFTM) method in FLOW-3D® (a general purpose CFD software) has been used [...]

nano bio computing – synthesis of a nano bio computer using DNA and nanorobots

Vaidyanathan G., Selva B., vickram college of engineering, IN
1) The paper is on interfacing nanotechnology with bio technology to result a nano bio computer. 2) This technology will be capable of replacing the present generation laptops. 3) DNA is used as a memory [...]

On the behavior of non-Newtonian fluids in microsystems for biotechnology

Berthier J., Le Vot S., Tiquet P., Rivera F., Caillat P., CEA/LETI/MINATEC, FR
In Biotechnology, it is generally the use to calculate and design prototypes of microsystems by considering aqueous or organic liquids that have a spatially uniform viscosity. However, many liquids used in biological applications are at [...]

A simulation of microfluidic oscillator micromixer

Khelfaoui R., University of Bechar, DZ
Micromixing is particularly interesting for many microfluidic applications. In micrometric size devices, reaching an efficient mixing is often difficult, due to laminarization of the flow. As an example, efficient mixing may be obtained using a [...]

Parameterized Structural Capacitance Behavioral Modeling for TFT-LCD Panel

Huang H.M., Li Y., National Chiao Tung University, TW
Thin film transistors (TFTS) find wide usage in active matrix liquid crystal displays. The basic principle of operation of the LCD panel is to control the transparency of each pixel portion by bus lines to [...]

A Physical Based Hot Carrier Injection Compact Model for Nanoscale FinFET

Ma C., Li B., Lin X., Zhang L., Zhang X., He J., Zhang L., Zhang X., Lin X., Peking University, CN
A detail analysis for nanoscale FinFET performance degradation induced by the Hot Carrier Injection (HCI) is given in this paper, and a physical based HCI compact model adapted to all the operation modes is presented. [...]

An Analytic Model of the Silicon-Based Nanowire Schottky Barrier MOSFET

Che Y., Zhang L., Zhou X., He J., Chan M., Peking University, CN
In this paper, an analytic model of the Silicon-based Nanowire Schottky-Barrier MOSFETs is developed based on the 2D solution of body potential together with the WKB tunneling theory. The proposed model predicts the electrical characteristics [...]

Generic Compact Model Development of Double-Gate MOSFETs with Inclusion of Different Operation Modes and Channels from Heavily Doped to Intrinsic Case

Zhou X., Zhang J., Zhang L., Zhang J., Zhang L., Ma C., He J., Chan M., Peking University, CN
In this paper, the Double-Gate MOSFET’s operation modes such as symmetric, asymmetric and independent-gate-operation are discussed and an idea for the generic compact model development is proposed. It is shown that the presented generic model [...]

An Analytic Terahertz Signal Detection Model of Silicon-based Nanowire Gated Field Effect Transistor

He F., Chen Y., Mu X., Lou H., Zhang L., Song Y., SZPKU, CN
In this paper, an analytical terahertz (THz) signal detection model of Silicon-based nanowire MOSFET (NWFET) is proposed. Beginning from the fundamental hydrodynamic transport equations, the expressions of the velocity spatial distribution and inversion charge transport [...]

Performance study of Ballistic and Quasi-Ballistic on Double-Gate MOSFETs 6T SRAM cell

Martinie S., Jaud M-A, Munteanu D., Thomas O., Le Carval G., Autran J-L, CEA/LETI/MINATEC, FR
The impact of ballistic/quasi-ballistic carrier transport on the switch of a CMOS inverter and on the noise margin of a 6T SRAM cell, both based on Double-Gate MOSFETs (DGMOS), is analysed using mixed-mode simulation. To [...]

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