Thin film transistors (TFTS) find wide usage in active matrix liquid crystal displays. The basic principle of operation of the LCD panel is to control the transparency of each pixel portion by bus lines to charge the pixel electrode. To obtain high display performance, the capacitance of each pixel is very important. However, the capacitance of a pixel is very hard to be analyzed because of the three-dimensional (3D) complex geometry structure. In this paper, we explore a systematical method to analyze the capacitance of an interested TFT device using a 3D technology computer aided design (TCAD) field simulation. A computational statistics methodology is developed and implemented which consists of the design of experiment (DOE) and the second-order response surface model (RSM). By considering the designing parameters as changing factors (i.e., the size variation and the position shift) and according to the DOE, we construct RSMs for the capacitances of TFT-LCD. The RSM highly explains the behavior of capacitances for the investigated TFT-LCD pixel. With Gaussian distribution, the model allows us to analysis the sensitivity of capacitances in a pixel TFT-LCD with respect to aforementioned factors efficiently. This approach could be incorporated into CAD tools for TFT-LCD design and may benefit the design automation of display panels.
Journal: TechConnect Briefs
Volume: 3, Nanotechnology 2009: Biofuels, Renewable Energy, Coatings, Fluidics and Compact Modeling
Published: May 3, 2009
Pages: 379 - 382
Industry sector: Advanced Materials & Manufacturing
Topic: Informatics, Modeling & Simulation