Performance study of Ballistic and Quasi-Ballistic on Double-Gate MOSFETs 6T SRAM cell

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The impact of ballistic/quasi-ballistic carrier transport on the switch of a CMOS inverter and on the noise margin of a 6T SRAM cell, both based on Double-Gate MOSFETs (DGMOS), is analysed using mixed-mode simulation. To simulate ballistic and quasi-ballistic transport, we introduced the pioneering approach of quasi-ballistic mobility proposed by Rhew et al into a TCAD simulator. Finally, we demonstrate the direct relation between the nature of transport in the channel and the 6T SRAM cell static performances.

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Journal: TechConnect Briefs
Volume: 3, Nanotechnology 2009: Biofuels, Renewable Energy, Coatings, Fluidics and Compact Modeling
Published: May 3, 2009
Pages: 359 - 362
Industry sector: Advanced Materials & Manufacturing
Topics: Informatics, Modeling & Simulation
ISBN: 978-1-4398-1784-1