Compact Modeling – Page 24 – TechConnect Briefs

Threshold-Voltage-Based Regional Modeling of MOSFETs with Symmetry and Continuity

Chiah S.B., Zhou X., Chandrasekaran K., Lim K.Y., Chan L., Chandrasekaran K., Chu S., Nanyang Technology University, SG

This paper presents a unified threshold-voltage-based (Vt-based) MOSFET model, which maintains source¡Vdrain symmetry and allows accurate prediction of transconductance (gm) and drain conductance (gds) and their derivatives (gm' and gds') with smooth transitions across regions [...]

An Analytical Subthreshold Current Model for Ballistic Double-Gate MOSFETs

Autran J-L, Munteanu D., Tintori O., Aubert M., Decarre E., CNRS, FR

An analytical subthreshold model of ultra-thin double-gate MOSFETs working in the ballistic regime is presented. The present approach captures the essential physics of such ultimate DG devices (quantum confinement, thermionic current) and introduces two main [...]

Automatic BSIM3/4 Model Parameter Extraction with Penalty Functions

Mahotin Y., Lyumkis E., Integrated Systems Engineering, Inc., US

The first successful automatic extraction of BSIM3/4 model parameters based on numerical optimization of a functional, which includes penalty functions, is reported. The penalty functions always keep the values of the model parameters within a [...]

Quantum-Mechanical Analytical Modeling of Threshold Voltage in Long-Channel Double-Gate MOSFET with Symmetric and Asymmetric Gates

Autran J-L, Munteanu D., Tintori O., Harrison S., Decarre E., Skotnicki T., CNRS, FR

A quantum-mechanical fully analytical model of the threshold voltage for long-channel Double-Gate MOSFETs has been developed. This model is based on analytical solutions for the decoupled Poisson and Schrödinger equations in the silicon film. The [...]

Improved Compact Model for Four-Terminal DG MOSFETs

Nakagawa T., Sekigawa T., Tsutsumi T., Hioki M., Suzuki E., Koike H., National Institute of Advanced Industrial Science and Technology, JP

Double-gate field-effect transistors are promising device structures which have excellent scalability. To evaluate merits of DG MODFETs, we developed a compact four-terminal DG MOSFET model by adopting the double charge-sheet model. In this presentation, we [...]

Topic: Compact Modeling

Threshold-Voltage-Based Regional Modeling of MOSFETs with Symmetry and Continuity

An Analytical Subthreshold Current Model for Ballistic Double-Gate MOSFETs

Automatic BSIM3/4 Model Parameter Extraction with Penalty Functions

Quantum-Mechanical Analytical Modeling of Threshold Voltage in Long-Channel Double-Gate MOSFET with Symmetric and Asymmetric Gates

Improved Compact Model for Four-Terminal DG MOSFETs

Characterization and Modeling of Silicon Tapered Inductors

A Practical Method to Extract Extrinsic Parameters for the Silicon MOSFET Small-Signal Model

A Trial Report: HiSIM-1.2 Parameter Extraction for 90 nm Technology

On the Correlations Between Model Process Parameters in Statistical Modeling

Analytic Formulae for the Impact Ionization Rate for use in Compact Models of Ultra-Short Semiconductor Devices