Random Dopant Induced Fluctuations of Characteristics in Deep Sub-micron MOSFETs

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As the gate length of MOSFET devices shrinks down below 100 nm, the fluctuation of major devices parameter, namely, threshold voltage (VTH), subthreshold swing, drain current (ID) and subthreshold leakage current duo to influences of processes variations becomes a serious problem. The fluctuation in conjunction with the scaling of the supply voltage may seriously the functionality, performance and yield of the corresponding systems. Random dopant fluctuation is one of the problems. Therefore, as scaling size of devices and developing of new transistor architecture, the random dopant fluctuation may be required to avoid so as improving the device integration.

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Journal: TechConnect Briefs
Volume: 3, Technical Proceedings of the 2005 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: May 8, 2005
Pages: 80 - 83
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topics: Advanced Manufacturing, Nanoelectronics
ISBN: 0-9767985-2-2