Papers – Page 811 – TechConnect Briefs

USIM Design Considerations

Bell A., Singhal K., Gummel H., Agere Systems, US

Compact models need to be carefully designed to predict circuit behavior efficiently, accurately and robustly. A variety of effects must work together and be consistently integrated into the model equations with redundancy. USIM is a [...]

A Basic Property of MOS Transistors and its Circuit Implications

Vittoz E., Enz C., Krummenacher F., Swiss Center for Electronics & Microtechnology, CH

The MOS transistor drain current is the (linear) superposition of independent and symmetrical effects of source and drain voltages. This basic property is not affected by the geometry or symmetry of the transistor, by the [...]

Implications of Gate Tunneling and Quantum Effects in the Gate-Channel Stack

Dutton R.W., Choi C-H, Stanford University, US

Simulation and modeling of gate tunneling current for thin-oxide MOSFETs and Double-Gate SOIs are discussed. Guidelines for design of leady MOS capacitors are proposed. Resonant gate tunneling current in DG SOI is simulated, based on [...]

Floating Gate Devices: Operation and Compact Modeling

Pavan P., Larcher L., Marmiroli A., Università di Modena e Reggio Emilia, IT

This paper describes a possible approach to Compact Modeling of Floating Gate devices. Floating Gate devices are the basic building blocks of Semiconductor Nonvolatile Memories (EPROM, EEPROM, Flash). Among these, Flash are the most innovative [...]

Compact, Physics-Based Modeling of Nanoscale Limits of Double-Gate MOSFETs

Chen Q., Wang L., Murali R., Meindl J.D., Georgia Institute of Technology, US

Compact, physics-based models of subthreshold swing and threshold voltage are presented for double-gate (DG) MOSFETs in symmetric, asymmetric, and ground-plane modes. Applying these device models, threshold voltage variations in DG MOSFETs are comprehensively and exhaustively [...]

Quasi-2D Compact Modeling for Double-Gate MOSFET

Chan M., Man T.Y., He J., Xi X., Lin C.H., Lin X., Lin C.H., Lin X., Ko P.K., Niknejad A.M., Hu C., Hong Kong University of Science and Technology, HK

This paper presents an approach to model the characteristics of undoped Double-Gate MOSFETs without relying on the charge-sheet approximation. Due to the extremely thin silicon film used, the inversion charge thickness becomes comparable to the [...]

Bias Dependent Modeling of Collector-Base Junction Effects in Bipolar Transistors

Tran H., Schroter M., University of Technology Dresden, DE

An analytical formulation for the voltage and current dependent electric field in the collector of a bipolar transistor is presented. The new field expression is then employed for calculating the base-collector depletion capacitance and the [...]

RF Noise Models of MOSFETs- A Review

Asgaran S., Jamal Deen M., McMaster University, CA

A thorough study of high frequency MOSFET noise compact modeling with emphasis on channel thermal noise modeling is presented. Although the modeling of MOSFET noise dates back to many years ago, the enhanced noise generated [...]

Advanced MOSFET Modeling for RF IC Design

Cheng Y., Skyworks Solutions, US

In this paper, advanced MOSFET modeling for radiofrequency (RF) integrated-circuit (IC) design is discussed. An introduction of the basics of RF modeling of MOSFET is given first. A simple sub-circuit model is then presented with [...]

R3, an Accurate JFET and 3-Terminal Diffused Resistor Model

McAndrew C., Motorola, US

This paper presents an improved compact model for diffused resistors and JFETs, valid over geometry, bias, and temperature. The model includes a physically based junction depletion model, a new and accurate velocity saturation model derived [...]