Papers – Page 1020 – TechConnect Briefs

Transient Simulation of Ferroelectric Hysteresis

Dragosits K., Hagenbeck R., Selberherr S., Technical University of Vienna, AT

We present amodel that allows the analysis of the behavior of ferroelectric materials in a wide range of frequencies. A common approach to the transient properties of dielectrics based on differential equations was extended by [...]

Wavelet Based Matrix Compression in Numerical Micromagnetics

Schrefl T., Süss D., Fidler J., Vienna University of Technology, AT

Magnetic sensors and magneto-mechanic devices consist of spatially distinct ferromagnetic parts. Modeling their functional behavior requires to take into account the magnetostatic interactions between the magnetic elements. A hybrid finite element / boundary element method [...]

Hybrid P-Element and Trefftz Method for Capacitance Computation

Gyimesi M., Wang J-S., Ostergaard D.F., ANSYS, Inc., US

The paper discusses efficient electrostatic field solutions techniques to simulate micro electro mechanical systems (MEMS): adaptive p-elements to remove the burden of manual mesh refinement; hybrid finite elements - Trefftz formulation to treat open boundary [...]

Influence of Element Size on the Precision and Required Computational Effort for 3D FEM Interconnect Capacitance Simulations of ULSI DRAM Cells

Hieke A., Infineon Technologies Corporation, US

A fundamental proble of all FEM capacitance computations in MEMS and ULSI is to determine proper mesh size for the elements representing the considered model. In particular, opticaml mesh size selection is crucial for large [...]

Inductance Calculation in Interconnect Structures

Harlander C., Sabelka R., Selberherr S., Technical University of Vienna, AT

We present a package based fnite elements for two and three-dimensional analyses of interconnect structures. Two preprocessors allow a layer-based input of the simulation geometry and the specification of the boundary conditions. Additionally, a third [...]

Squeezed Electrons in GaN Quantum Wells

Ridley B.K., Zakhleniuk N.A., Bennett C.R., University of Essex, UK

We present an analytic theory of hot-electron transport in a GaN quantum well containing a large-enough electron concentration for strong electron-electron scattering to establish a drifted distribution. Novel behaviour includes the squeezed electron distribution and [...]

Modelling of Atmosphere Sensitive Heterojunctions for Device Applications

Mangamma G., Gnanasekaran T., Indira Gandhi Centre For Atomic Research, IN

Simple and inexpensive methods of detecting pollutants in ambients are needed for maintenance of safe environment in modern industries. Chemical sensors based on catalytic combustion and using solid state electrolytes and semiconducting oxides etc. are [...]

A Mathematical Model for the Threshold Voltage of a Partially and Fully Depleted MOS/SOI Structure with a Gaussian Distribution in the Film

Ravariu C., Ravariu F., Rusu A., Dobrescu D., Dobrescu L., Dobrescu D., Dobrescu L., Ravariu C., Ravariu F., Codreanu C., Avram M., University of Bucharest, RO

The analytical models for the electric field and potential distributions are necessary to establish the inversion or accumulation conditions at the front and back interfaces for a lot of SOI devices. The paper refers to [...]

Monte-Carlo Simulation of GaAs Devices Using High Generality Object-Oriented Code and Encapsulated Scattering Tables

Harris J., Vasileska D., Arizona State University, US

Many factors are responsible for the continued shift in industry prototyping preference from device fabrication to device simulation. One of the incentives for this transition is the generality and flexibility gained by avoiding a physical [...]

A Velocity-Overshoot Subthreshold Current Model for Deep-Submicrometer MOSFET Devices

Qian W., Zhou X., Wang Y., Lim K.Y., Nanyang Technological University, SG

In this paper, a new theoretical approach to submicrometer MOSFET subthreshold current modeling is presented. The diffusion and drift currents are calculated, respectively. The effect of velocity overshoot on subthreshold current is investigated. Comparison with [...]