A Compact Model for SiC Junction Barrier Schottky Diode for High-Voltage and High-Temperature Applications

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SiC-based Junction Barrier Schottky (JBS) Diode is employed in power conversion applications because of its low-leakage current and high switching speed characteristics even at elevated temperatures. JBS structure originates from Schottky Barrier Diode (SBD) structure, [...]

Growth, Optical Characterization and Modelling of ZnO Nanorods on Si, SiC and Macroporous Si Structure

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1- Instituto de Física, Universidade Federal da Bahia, Ondina, Salvador-Ba, 40210-340, Brazil 2- CETEC-Universidade Federal do Recôncavo da Bahia, Cruz das Almas-Ba, 44380-000, Brazil 3- Department of Materials Science and Engineering, Royal Institute of Technology, [...]