TCAD Analysis of Frequency Dependent Intrinsic and Extrinsic Parameters of GEWE-SiNW MOSFET

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In this paper, extrinsic parameters of Gate Electrode Workfunction Engineered (GEWE) Silicon Nanowire MOSFET is analyzed in terms of parasitics capacitances, resistances and inductances using 3D-TCAD device simulations. The extracted parameters have been compared with those of conventional SiNW MOSFET with identical device geometry. All simulations have been performed using ATLAS and DEVEDIT-3D device simulators. In our simulation, we have adopted the Bohm Quantum mechanical model.Simulation results shows the intrinsic source, drain and gate resistances are comparatively lower in comparison to SiNW MOSFET. Also, the bias dependent parasitic capacitances of GEWE-SiNW MOSFET turned out to be smaller than that of SiNW MOSFET.

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Journal: TechConnect Briefs
Volume: 4, Advanced Manufacturing, Electronics and Microsystems: TechConnect Briefs 2015
Published: June 14, 2015
Pages: 185 - 188
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topics: Nanoelectronics
ISBN: 978-1-4987-4730-1