PECVD – TechConnect Briefs

Functionalization of self-organized networked SiOxHyCz nano-islands deposited by atmospheric pressure microwave plasma torch on Au/Si(100) substrates patterned by nano-indentation

Landreau X., Boëns B., Lanfant B., Merle T., Bouscarrat G., Dublanche-Tixier C., Zerrouki R., Tristant P., Université de Limoges, FR

A coaxial injection microwave excited plasma torch operating at atmospheric pressure is applied to synthesizing SiOxHyCz nano-islands from hexamethyldisiloxane precursor on prepatterned Au/Si(100) substrates.Prior to the PECVD deposition, the substrates are patterned by nano-indentation. SEM [...]

Controllable Sequential Low Temperature Plasma Assisted Growth of Vertical Multi-wall & Single-wall CNTs

Kolahdouz Z., Darbari S., Mohajerzadeh S., University of Tehran, IR

By investigating the effects of growth parameters of CNTs, we have arrived at small diameter, single/multi-wall nanotubes at low temperatures. Synthesis of CNTs was performed using the gas mixture of the C2H2/CH4 gas and H2 [...]

Fluorination effects on tribological characteristics of hydrogenated amorphous carbon thin films

Rubio-Roy M., Portal S., Polo M.C., Pascual E., Bertran E., Andújar J.L., Universitat de Barcelona, ES

Hydrogenated amorphous carbon (a C:H) films are good candidates for biomedical applications, requiring smooth surfaces, biocompatibility and singular tribological characteristics. The addition of elements to a C:H films, such as oxygen, silicon, fluorine or metals, [...]

Simultaneous Tip and Base Growth of Carbon Nanotubes Produced by RF Plasma Enhanced CVD

García-Céspedes J., Pascual E., Bertran E., IN2UB, Universitat de Barcelona, ES

In this work, carbon nanotubes (CNTs) with curly and straight segments were synthesized by means of radio-frequency plasma enhanced chemical vapour deposition (rf-PECVD) onto silicon substrates, using Fe as the catalyst material. The origin of [...]

Characterization of Nanaoporous Low-Dielectric Constant SiCOH Films using Organosilane Precursor

Heo K., Park S.-G., Yoon J., Jin K.S., Jin S., Jin K.S., Jin S., Rhee S.W., Ree M., Pohang University of Science and Technology, KR

The grazing incidence small-angle X-ray scattering (GISAXS) and X-ray reflectivity (XR) analysis were performed to investigate the nanoporous structure of low dielectric constant carbon-doped silicon oxide (SiCOH) films, which were deposited with plasma enhanced chemical [...]

CMOS Compatability of Carbon Nanotubes on SOI Devices

Haque M.S., Oei S.P., Teo K.B.K., Udrea F., Gardner J.W., Milne W.I., Cambridge University Engineering Department, UK

This paper reports for the first time PECVD and CVD growth of MWNTs both aligned and non aligned on high temperature partially depleted CMOS SOI substrates. We also report for the first time the growth [...]

Low Temperature Deposition of High-Quality Nanometer-Thick Dielectric Films in an Electron Cyclotron Resonance (ECR) Plasma-Enhanced CVD System

Xie L., Deng J., Shepard S., Tsakirgis J., Chen E., Harvard University, US

One of the challenges facing in nanofabrication is to deposit dielectric films with thickness compared to the feature size under fabrication, typically in a range of nanometer, for the purposes such as gate dielectrics, surface [...]

Growth of Individual Vertically Aligned Nanotubes/Nanofibers with Small Diameter by PECVD on Different Metal Underlayers

Kabir M.S., Morjan R.E., Svensson K., Nerushev O.A., Lundgren P., Bengtsson S., Enokson P., Campbell E.E.B., Chalmers University of Technology, SE

The primary goal of this work is to achieve significant improvement of growth of carbon nanotubes (CNTs) on different metal underlayers that can provide a platform for electronic companies to adopt the technology into their [...]

Feature Length-Scale Modeling of LPCVD and PECVD MEMS Fabrication Processes

Musson L.C., Ho P., Plimpton S.J., Schmidt R.C., Sandia National Laboratories, US

The surface micromachining processes used to manufacture MEMS devices and integrated circuits transpire at such small length scales and are sufficiently complex that theoretical analysis of them is particularly inviting. Under development at Sandia National [...]

Gas Flow Simulation in a PECVD Reactor

da Silva A.N.R., Morimoto N.I., LSI – EPUSP, BR

In this work are presented the gas flo simulation in a hand made PECVD-TEOS reactor. We used the FLOTRAN-CFD code of the ANSYS simulator to predict the velocity and temperature curves in the reactor. The [...]