Low Temperature Deposition of High-Quality Nanometer-Thick Dielectric Films in an Electron Cyclotron Resonance (ECR) Plasma-Enhanced CVD System

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One of the challenges facing in nanofabrication is to deposit dielectric films with thickness compared to the feature size under fabrication, typically in a range of nanometer, for the purposes such as gate dielectrics, surface passivation, diffusion barrier, charge storage gap, and etc. In addition, many applications use a variety of substrates that require deposition temperatures less than 200_0†2C without losing film qualities. In this work, we demonstrate the feasibility of using electron cyclotron resonance (ECR) plasma-enhanced CVD method to achieve ultra-thin (nanometer scale) dielectric thin films at temperatures less than 200_0†2C. In particular, Si3N4 films with thickness in sub-ten nanometer were successfully deposited at temperature

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Journal: TechConnect Briefs
Volume: 2, Technical Proceedings of the 2005 NSTI Nanotechnology Conference and Trade Show, Volume 2
Published: May 8, 2005
Pages: 328 - 331
Industry sector: Advanced Materials & Manufacturing
Topics: Advanced Materials for Engineering Applications, Coatings, Surfaces & Membranes
ISBN: 0-9767985-1-4