In this work are presented the gas flo simulation in a hand made PECVD-TEOS reactor. We used the FLOTRAN-CFD code of the ANSYS simulator to predict the velocity and temperature curves in the reactor. The results showed high influence of the reactor geometry and the deposition process pressure in the velocity distribution curves.
Journal: TechConnect Briefs
Volume: 2, Technical Proceedings of the 2002 International Conference on Computational Nanoscience and Nanotechnology
Published: April 22, 2002
Pages: 360 - 363
Industry sector: Sensors, MEMS, Electronics
Topics: Modeling & Simulation of Microsystems