MOSFET – Page 7 – TechConnect Briefs

Introduction to PSP MOSFET Model

Gildenblat G., Li X., Wang H., Wu W., van Langevelde R., Scholten A.J., Smit G.D.J., Klaassen D.B.M., Pennsylvania State University, US

PSP is the latest and the most advanced compact MOSFET model developed by merging the best features of the two surface potential-based models: SP (devel- oped at The Pennsylvania State University) and MM11 (developed by [...]

A History of MOS Transistor Compact Modeling

Sah C-T, University of Florida, US

The MOSFET (Metal-Oxide-Silicon Field-Effect- Transistor) or MOS Transistor (MOST) is a three dimensional electronic device. It operates on the conductivity modulation principle in a thin semiconductor layer by a controlling electric field to give amplifying [...]

MOSFET Analytical Inversion Charge Model with Quantum Effects using a Triangular Potential Well Approximation

Abebe H., Cumberbatch E.C., Tyree V., Morris H.C., USC/ISI MOSIS, US

The eigenfunctions from solutions of the Schrödinger equation for a triangular potential well are the Airy functions. The triangular potential approximation has been shown to be a good approximation for the charge density when the [...]

Analytical Surface Potential Model with Polysilicon Gate Depletion Effect for NMOS

Cumberbatch E., Abebe H., Morris H., Tyree V., USC/ISI MOSIS, US

Different modeling approaches for the sub-100nm MOSFET are discussed in [1] and the surface potential description model is reported to be promising, [1, 2]. Surface potential changes impact gate capacitance and current-voltage (I-V) characteristics of [...]

A New Semiconductor-Wafer Market Based on the Deepening of Surface Undulations to Form Strongly Textured Atomic Ridges (STAR) With Pitches from 0.6 to 5.4 nm: Model Demonstrations in Electronics and the Physical and Life Sciences

Kendall D.L., Kendall M., Kendall D.L., Kendall M., StarMega Corp, US

A broad patent position has been established that produces semiconductor wafers containing physically-deepened grooves, ridges and quantum-dots on particular crystal planes with perfectly spaced pitches of 0.9 to 5.4 nm determined by the inherent crystal [...]

A Study of the Threshold Voltage Variations for Ultra-thin Body Double Gate SOI MOSFETs

Tang C-S, Lo S-C, Lee J.W., Tsai J-H, Li Y., Natl Nano Device Labs & Natl Chiao Tung Univ, TW

Double gate silicon on insulator (SOI) devices are more and more attractive for sub-50 nm ultra-large scaled integrated (ULSI) circuits manufacturing. The double gate SOI devices, owing to a difficulty of manufacturing uniformity, suffer fluctuations [...]

Self-Consistent Models of DC, AC, Noise and Mismatch for the MOSFET

Galup-Montoro C., Schneider M.C., Arnaud A., Klimach H., Universidade Federal de Santa Catarina, BR

This paper shows how the full compatibility of the ACM model with the quasi-Fermi potential formulation for the drain current allows the derivation of a very simple model of the MOSFET channel. As a result, [...]

A Practical Method to Extract Extrinsic Parameters for the Silicon MOSFET Small-Signal Model

Wang S.C., Huang G.W., Chen K.M., Peng A.S., Tseng H.C., Hsu T.L., National Nano Device Laboratories, TW

In this paper, the substrate parasitic has been added into the conventional MOSFET small-signal model for RFIC applications, and an extraction approach based on the curve-fitting method proposed by S. Lee also has been developed [...]

Compact, Physics-Based Modeling of Nanoscale Limits of Double-Gate MOSFETs

Chen Q., Wang L., Murali R., Meindl J.D., Georgia Institute of Technology, US

Compact, physics-based models of subthreshold swing and threshold voltage are presented for double-gate (DG) MOSFETs in symmetric, asymmetric, and ground-plane modes. Applying these device models, threshold voltage variations in DG MOSFETs are comprehensively and exhaustively [...]

Full-band Particle-based Simulation of Germanium-On-Insulator FETs

Beysserie S., Branlard J., Aboud S., Goodnick S.M., Thornton T., Saraniti M., Illinois Institute of Technology, US

We model and simulate novel fully depleted (FD) sub-50nm gate lengths MOSFET structures using a full-band particle simulator based on the Cellular Monte Carlo (CMC) method that provides an accurate transport model at the high [...]