A New Semiconductor-Wafer Market Based on the Deepening of Surface Undulations to Form Strongly Textured Atomic Ridges (STAR) With Pitches from 0.6 to 5.4 nm: Model Demonstrations in Electronics and the Physical and Life Sciences

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A broad patent position has been established that produces semiconductor wafers containing physically-deepened grooves, ridges and quantum-dots on particular crystal planes with perfectly spaced pitches of 0.9 to 5.4 nm determined by the inherent crystal structure. See www.starmega.com . In our initial R&D, optical lithography is used in a standard production facility on top of our STAR wafer’s patented underlying nanotexture to produce unique and useful new silicon devices and integrated circuits.  The high-value-added component of these special STAR wafers is the main basis of this business opportunity. One generic method for producing nanoridges on wafers of any crystalline structure (including III-Vs) will be demonstrated with crystal models, as will one-dimensional charged carrier transport.  Several applications of the STAR concept will be demonstrated with mock-ups, namely: ballistic transport, very high mobility and ultra-low power Si MOSFETs; security and environmental sensors for simultaneous monitoring of hundreds of different molecules based on STAR arrays containing nanotubes, DNA, or other long chain molecules; high temperature classical BCS superconductors (not “HTS”) with Buckyballs between flexible walls; mega-tip probes to SCULPT nanocircuits; particle filters with uniform openings down to at least 0.3 nm for nano-shadow masks and for oxygen separation from nitrogen.

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Journal: TechConnect Briefs
Volume: 3, Technical Proceedings of the 2004 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: March 7, 2004
Pages: 510 - 513
Industry sector: Advanced Materials & Manufacturing
Topics: Advanced Manufacturing
ISBN: 0-9728422-9-2