impact ionization – TechConnect Briefs

An Improved Impact Ionization Model for SOI Circuit Simulation

Xi X., Li F., Liu W., Tudor B., Wang P., Wang W., Liu W., Lee F., Wang P., Wang W., Subba N., Goo J-S, Synopsys, Inc., US

The impact ionization (II) model accuracy issue in industry standard SOI MOSFET is discussed in the paper. Based on Medici 2D simulation study, an improved impact ionization model is proposed which can capture the voltage [...]

Impact of Gate Induced Drain Leakage and Impact Ionization Currents on Hysteresis Modeling of PD SOI Circuits

Chen Q., Suryagandh S., Goo J-S, An J.X., Thuruthiyil C., Icel A.B., Advanced Micro Devices, US

The impact of the gate induced drain leakage and impact ionization currents on hysteresis of PD FB SOI circuits is examined, and a physical understanding is provided. Measured silicon data from 90nm and 65nm PD [...]

Analytic Formulae for the Impact Ionization Rate for use in Compact Models of Ultra-Short Semiconductor Devices

Morris H.C., DePass M.M., Abebe H., San Jose State University, US

Quade, Schöll and Rudan have showed that in the limit of large screening length the impact ionization rate per unit time can be expressed as an integral involving the electron density function. The assumption of [...]

Semi-Analytic Boltzmann Model for the Substrate Current of Short-Channel MOSFETs with Lightly Doped Drains

Morris H.C., De Pass M.M., San Jose State University, US

As MOSFET sizes have been reduced to nano-scale dimensions, existing models of device behavior, such as the drift diffusion equations, cease to be valid. In the nano domain, more fundamental equations, such as the Boltzmann [...]

Simulation of Device-Structure Dependence of Surface-Related Kink Phenomena in GaAs FETs

Wakabayashi A., Kazami Y., Ozawa J., Mitani Y., Horio K., Shibaura Institute of Technology, JP

Effects of surface states on the kink phenomena in GaAs MESFETs are studied by two-dimensional simulation. It is shown that the kink could arise due to impact ionization of holes and the following hole trapping [...]

DD and HD Models for Noise due to Impact Ionization in Si and SiGe Devices Verified by MC Simulations

Neinhus B., Jungemann C., Meinerzhagen B., Universitat Bremen, DE

An e cient model for the simulation of terminal current noise in the presence of avalanche carrier generation is presented. Our approach is investigated by DD, HD, and MC noise simulations of a 1D N+NN+ [...]

A Physics-Based Impact Ionization Model Using Six Moments of the Boltzmann Transport Equation

Grasser T., Kosina H., Gritsch M., Selberherr S., TU Wien, AT

Due to the ever decreasing device geometries non-local effects gain more and more importance. It is particularly well known that impact ionization is not properly described by neither a local field nor a local energy [...]

Impact of Non-Stationary Transport Effects on Realistic 50nm MOS Technology

Munteanu D., Le Carval G., Guegan G., LETI, CEA/Grenoble, DMEL, FR

This paper highlights the impact of non-stationary transport on performances of deep submicron CMOS bulk technology. We present a quantitative analysis of technology influence on the needed level for carrier transport modeling (Drift-Diffusion versus Energy [...]

Improved Prediction of Length/Temperature-Dependent Impact Ionization Induced Body Current Based on an Accurate Saturation Drain Voltage Model

Seah S.H.L., Yeo K.S., Ma J.G., Do M.A., Nanyang Technological University, SG

The length/temperature-dependent body current IB in deep submicron LDD pMOSFETs is investigated, based on an improved saturation drain voltage (VSDsat) extraction algorithm and model. The accuracy of VSDsat is shown to have a direct influence [...]