DG MOSFET – TechConnect Briefs

Drain Current Model for Thin Body Undoped and Lightly Doped Double-Gate MOSFETs

Abd Elhamid H., Ineguez B., Ismail Y., Deen MJ., Zewail City of Science and Technology, EG

We developed new compact models that include the QM effects on electrical properties such as the surface potential, and drain current. The models were used to study the impact of subband engineering and holes/electrons IMREF [...]

Analytic Channel Potential Solution of Symmetric DG AMOSFETs

Chen L., Xu Y., Zhang L., Zhou W., Zhou X., Zhou W., Zhou X., He J., Peking University, CN

This paper presents an analytic channel potential solution of the symmetrical DG AMOSFETs. The proposed solution is derived from complete 1-D Poisson-Boltzmann equation by taking three components of net charge density (fixed charge, holes and [...]

Physical Carrier Mobility in Compact Model of Independent Double Gate MOSFET

Reyboz M., Martin P., Rozeau O., Poiroux T., CEA-LETI, FR

We have already developed an explicit threshold voltage based compact model of independent double gate MOSFET which well works for gate length between 30 nm and 1µm, or more. However, the mobility was assumed constant. [...]

Capacitance modeling of Short-Channel DG and GAA MOSFETs

Børli H., Kolberg S., Fjeldly T.A., Norwegian University of Science and Technology, NO

Based on our framework model of the electrostatics and the drain current in short-channel, nanoscale DG and GAA MOSFETs, we here present a corresponding model for the device capacitances covering all regimes of operation from [...]

A Computationally Efficient Method for Analytical Calculation of Potentials in Undoped Symmetric DG SOI MOSFET

Cobianu O., Glesner M., Darmstadt University of Technology, DE

In order to build an analytical model of an undoped symmetric DG SOI MOSFET devices, an accurate but rather difficult method was used by S. Malobabic et.al. [2] in their papers that is based on [...]

A Physics-Based Compact Model for Nano-Scale DG and FD/SOI MOSFETs

Fossum J., Ge L., Chiang M-H, University of Florida, US

A process/physics-based compact model (UFDG) for double-gate (DG) MOSFETs is overviewed. The model, in essence, is a compact Poisson-Schrödinger solver, including accountings for short-channel effects, and is applicable to nano-scale fully depleted (FD) SOI MOSFETs [...]

A Physics-Based Compact Model for Nano-Scale DG and FD/SOI MOSFETs

Fossum J., Ge L., Chiang M-H, University of Florida, US

A process/physics-based compact model (UFDG) for double-gate (DG) MOSFETs is overviewed. The model, in essence, is a compact Poisson-Schrödinger solver, including accountings for short-channel effects, and is applicable to nano-scale fully depleted (FD) SOI MOSFETs [...]