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HomeKeywordsdevice physics

Keywords: device physics

An Explicit Carrier-Based Compact Model for Surrounding-Gate MOSFETs

He J., Liu F., Bian W., Tao Y., Wu W., Lu K., Wang T., Chan M., Peking University, CN
An explicit carrier-based model for the undoped SRG MOSFETs has been developed by an accurate yet analytic carrier concentration approximation. This new explicit model requires no numerical iteration but more accurate and computation efficient, thus [...]

A Carrier-Based Analytic Model for Undoped Ultra-Thin-Body Silicon-on-Insulator (UTB-SOI) MOSFETs

He J., Bian W., Tao Y., Li B., Chen Y., Peking University, CN
A carrier-based analytical model for undoped (lightly doped) UTB-SOI MOSFETs is derived by solving the Poisson equation coupled to the Pao-Sah current formulation. It is also shown that the predicted I-V characteristics are in complete [...]

A History of Electronic Traps on Silicon Surfaces and Interfaces

Sah C-T, Jie B.B., Chen Z., University of Florida, US
A review of the electronic or electron and hole traps on silicon surfaces and interfaces is given. They are increasingly affecting the electrical signal properties of silicon diodes and transistors as the technologies for digital, [...]

A Carrier Based Analytic Model for Undoped Surrounding-Gate MOSFETs

He J., Zhang X., Chan M., Wang Y., Peking University, CN
A carrier-based analytic DCIV model for the undoped cylindrical surrounding-gate MOSFETs is presented in this paper. It is based on an exact solution of the Poisson equation and a Pao-Sah current formulation in terms of [...]

Benchmark Tests on Conventional Surface Potential Based Charge-Sheet Models And the Advanced PUNSIM Development

He J., Song Y., Niu X., Zhang G., Zhang X., Zhang G., Zhang X., Huang R., Chan M., Wang Y., Peking University, CN
This paper reports the benchmark test results of surface potential solution, inversion charge and channel current calculation, and short-channel effect model of various surface based charge-sheet models and our PUNSIM development to breakthrough the drawbacks [...]

A History of MOS Transistor Compact Modeling

Sah C-T, University of Florida, US
The MOSFET (Metal-Oxide-Silicon Field-Effect- Transistor) or MOS Transistor (MOST) is a three dimensional electronic device. It operates on the conductivity modulation principle in a thin semiconductor layer by a controlling electric field to give amplifying [...]

A History of MOS Transistor Compact Modeling

Sah C-T, University of Florida, US
The MOSFET (Metal-Oxide-Silicon Field-Effect- Transistor) or MOS Transistor (MOST) is a three dimensional electronic device. It operates on the conductivity modulation principle in a thin semiconductor layer by a controlling electric field to give amplifying [...]

Convergence Issues in Ab-initio Transport Calculation through Oxide Barriers and Molecules

Fonseca L.R.C., Demkov A.A., Motorola, Inc., US
Ab-initio calculations of transport through nanometer scale structures, such as individual atoms or molecules and ultra-thin oxide barriers directly link atomic structure and chemistry, which are difficult to probe, to transport properties, which are easier [...]

First-principles Study of Electron Transport through Atomistic Metal-Oxide-Semiconductor Structures

Zhang X., Fonseca L.R.C., Demkov A.A., Motorola, Inc., US
We describe a theoretical scheme to combine first-principles molecular dynamics simulation and non-perturbative scattering theory for transport calculations. We compare our approach with published results for electron transport through a single Al atom. The method [...]

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