Surface Potential Based Compact I-V Model for GaN HEMT Devices

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Gallium Nitride (GaN)-based high electron mobility transistors (HEMTs) are emerging as promising contenders to replace existing Silicon and Gallium Arsenide (GaAs) devices in the radio-frequency/microwave power amplifiers and high-power switching applications. Along with the fast [...]

Computation Efficient yet Accurate Surface Potential Based Analytic Model for Symmetric DG MOSFETs to Predict Current-Voltage Characteristics

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A computation efficient yet accurate surface potential-based analytic model for the symmetric double-gate MOSFETs is proposed to simulate double-gate device current-voltage characteristics in this paper. This model consists of a surface potential versus voltage input [...]