device physics – TechConnect Briefs

Numerical Method to Simulate GFET Terahertz Wave Detection

Ma X., He J., He X., Li C., He J., He X., Jun P., Hu G., Ren Y., Wang X., SoC Key Laboratory, Peking University Shenzhen Institute and PKU-HKUST Shenzhen-Hong Kong Institution, CN

A numerical method to simulate THz wave generation and detection of the graphene base field effect transistor (GFET) is developed in this paper. It is derived directly from the hydrodynamic equations and implemented in Matlab [...]

Surface Potential Based Compact I-V Model for GaN HEMT Devices

Chang C., He J., He X., He Y., Li C., Liu J., He J., He X., He Y., Liu J., He J., He X., He Y., Pan J., Hu G., Ren Y., SoC Key Laboratory, Peking University Shenzhen Institute and PKU-HKUST Shenzhen-Hong Kong Institution, CN

Gallium Nitride (GaN)-based high electron mobility transistors (HEMTs) are emerging as promising contenders to replace existing Silicon and Gallium Arsenide (GaAs) devices in the radio-frequency/microwave power amplifiers and high-power switching applications. Along with the fast [...]

Analytic Modeling of BioFET as a pH Sensor

Song Y., Guan Y., Zhang J., Zhang X., He J., Zhang J., Zhang X., Lin X., Peking University, CN

In this paper, the analytic modeling of the BioFET as a pH sensor has been developed from the complete surface potential equation and channel expression. Combining the physical MOSFET theory with electrochemistry of the electrolyte, [...]

Compact Modeling of Dynamic Threshold Voltage of FinFET High K Gate Stack and Application in Circuit Simulation

He F., Ma C., Li B., Lin X., Zhang L., Zhang X., Zhang L., Zhang X., Lin X., SZPKU, CN

Compact modeling study of dynamic threshold voltage of FinFET high K gate stack is proposed in this paper. Both slow transient (STCE) and fast transient charging effect (FTCE) are included in this model. Finally, this [...]

Computation Efficient yet Accurate Surface Potential Based Analytic Model for Symmetric DG MOSFETs to Predict Current-Voltage Characteristics

Song Y., Zhang J., Zhang L.N., Zhang J., Zhang L.N., Zhuang H., Che Y.C., He J., Chan M., Peking University, CN

A computation efficient yet accurate surface potential-based analytic model for the symmetric double-gate MOSFETs is proposed to simulate double-gate device current-voltage characteristics in this paper. This model consists of a surface potential versus voltage input [...]

An Analytic Model of the Silicon-Based Nanowire Schottky Barrier MOSFET

Che Y., Zhang L., Zhou X., He J., Chan M., Peking University, CN

In this paper, an analytic model of the Silicon-based Nanowire Schottky-Barrier MOSFETs is developed based on the 2D solution of body potential together with the WKB tunneling theory. The proposed model predicts the electrical characteristics [...]

Surface Potential versus Voltage Equation from Accumulation to Strong Region for Undoped Symmetric Double-Gate MOSFETs and Its Continuous Solution

He J., Chen Y., Li B., Wei Y., Chan M., Peking University, CN

Surface potential is one key variable in DG MOSFET compact modeling. A complete surface potential versus voltage equation and its continuous solution from the accumulation to strong inversion region are presented in this paper for [...]

A Complete Analytic Surface Potential-Based Core Model for Undoped Cylindrical Surrounding-Gate MOSFETs

He J., Zhang J., Zhang L., Zhang J., Zhang L., Ma C., Chan M., Peking University, CN

An analytic surface potential-based non-charge-sheet core model for cylindrical undoped surrounding-gate (SRG) MOSFETs is presented in this brief. Starting from the exact surface potential solution of the Poisson’s equation in the cylindric surrounding-gate (SRG) MOSFETs, [...]

A Continuous yet Explicit Carrier-Based Core Model for the Long Channel Undoped Surrounding-Gate MOSFETs

Zhang J., Zhang L., He J., Liu F., Zhang J., Zhang L., Feng J., Ma C., Peking University, CN

An explicit carrier-based core model for the long channel undoped surrounding-gate MOSFETs is presented in the paper An analytic approximation solution to the carrier concentration is developed from a simplified Taylor expansion of the exact [...]

Numerical Analysis on Si-Ge Nanowire MOSFETs with Core-Shell Structure

Fu Y., He J., Liu F., Zhang L., Feng J., Ma C., Peking University, CN

This paper investigates the transport properties of the silicon/Germanium nanowire MOSFETs with core-shell structure by a numerical method. Coupling Poisson’s equation to Schrödinger’s equation for electrostatics calculation, and electron structure to current transport equation for [...]