A Physics Based Potential Model for Cylindrical Surrounding Gate MOSFETs with SiO2- Core Si-Shell Structure
Zhang X., He J., Chan M., Du C., Ye Y., Zhao W., Wu W., Wang W., PKU-HKUST Shenzhen-Hongkong Institution, CN
A physics based potential model for intrinsic long-channel cylindrical surrounding gate MOSFETs with SiO2 -core Si-Shell structure is presented in this paper. The accurate potential solution of Poisson’s equation in a cylindrical coordinate system is [...]