circuit simulation – Page 2 – TechConnect Briefs

A Carrier-Based Analytic Model for Undoped Ultra-Thin-Body Silicon-on-Insulator (UTB-SOI) MOSFETs

He J., Bian W., Tao Y., Li B., Chen Y., Peking University, CN

A carrier-based analytical model for undoped (lightly doped) UTB-SOI MOSFETs is derived by solving the Poisson equation coupled to the Pao-Sah current formulation. It is also shown that the predicted I-V characteristics are in complete [...]

A Framework for Generic Physics Based Double-Gate MOSFET Modeling

Chan M., Taur Y., Lin C.H., He J., Niknejad A., Hu C., Hong Kong University of Science & Technology, HK

This paper presents a framework to develop a generic and physical Double-Gate MOSFET model. Due to limited available physical data and existence of a large variety of device structures, flexibility to assemble model modules to [...]

Quasi-2D Compact Modeling for Double-Gate MOSFET

Chan M., Man T.Y., He J., Xi X., Lin C.H., Lin X., Lin C.H., Lin X., Ko P.K., Niknejad A.M., Hu C., Hong Kong University of Science and Technology, HK

This paper presents an approach to model the characteristics of undoped Double-Gate MOSFETs without relying on the charge-sheet approximation. Due to the extremely thin silicon film used, the inversion charge thickness becomes comparable to the [...]

A Novel SPICE Compatible Current Model for OLED Circuit Simulation

Li Y., Lee B-S, Lee J.W., Lee B-S, Lee J.W., Lu C-S, Chen W-H, National Chiao Tung University, TW

high quality, and low power consumption display [1-2]. It is known that the brightness of the OLED is controlled by the current density of the device; therefore, precisely controlling the current density of active matrix [...]

Computational Prototyping of an RF MEMS Switch using Chatoyant

Bails M., Martinez J.A., Levitan S.P., Avdeev I., Lovell M., Chiarulli D.M., University of Pittsburgh, US

In this paper we demonstrate the capabilities of our system-level CAD tool, Chatoyant, to model and simulate an RF MEMS switch. Chatoyant is a mixed signal, multi-domain CAD tool that can be used to design [...]

Quasi-2D Compact Modeling for Double-Gate MOSFET

Chan M., Man T.Y., He J., Xi X., Lin C.H., Lin X., Lin C.H., Lin X., Ko P.K., Niknejad A.M., Hu C., Hong Kong University of Science and Technology, HK

This paper presents an approach to model the characteristics of undoped Double-Gate MOSFETs without relying on the charge-sheet approximation. Due to the extremely thin silicon film used, the inversion charge thickness becomes comparable to the [...]

A Compact Model Methodology for Device Design Uncertainty

Williams R., Watts J., Na M-H, Bernstein K., Internatoinal Business Machines Corporation, US

Todays ULSI chip and transistor technologies have a high degree of concurrency due to the complexity of new, advanced high performance features. This creates challenges for circuit designer who must account for the evolution of [...]

A Framework for Generic Physics Based Double-Gate MOSFET Modeling

Chan M., Taur Y., Lin C.H., He J., Niknejad A., Hu C., Hong Kong University of Science & Technology, HK

This paper presents a framework to develop a generic and physical Double-Gate MOSFET model. Due to limited available physical data and existence of a large variety of device structures, flexibility to assemble model modules to [...]

A Physical Compact MOSFET Mobility Model Including Accurate Calculation of Saturation Surface Potential

Benson J., D’Halleweyn N.V., Mistry K., Redman-White W., University of Southampton, UK

This paper describes a MOSFET vertical mobility model that has been implemented in a surface potential based compact model [1]. The main scattering mechanisms (surface roughness, phonon, and Coulomb) are accounted for using an expression [...]

Simulation Study of Non-Quasi Static Behaviour of MOS Transistors

Kumar D.V., Thakker R.A., Patil M.B., Rao V.R., Indian Institute of Technology - Bombay, IN

In this paper, we study the "non-quasi static" (NQS) behaviour of MOS transistors using an exact quasi static Look-up Table (LUT) [1] MOSFET model implemented in a general-purpose circuit simulator SEQUEL [2], device simulator ISE-TCAD [...]