Simulation Study of Non-Quasi Static Behaviour of MOS Transistors

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In this paper, we study the “non-quasi static” (NQS) behaviour of MOS transistors using an exact quasi static Look-up Table (LUT) [1] MOSFET model implemented in a general-purpose circuit simulator SEQUEL [2], device simulator ISE-TCAD [3] and SPICE BSIM3v3 [4] QS and NQS models. An NMOS transistor of channel length 2 um is simulated using LUT, ISE and SPICE3 and terminal currents are qualitatively studied. The method for extraction of terminal charges, which are required for circuit simulation using the LUT approach also presented.

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Journal: TechConnect Briefs
Volume: 1, Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems
Published: April 22, 2002
Pages: 742 - 745
Industry sector: Sensors, MEMS, Electronics
Topic: Compact Modeling
ISBN: 0-9708275-7-1