Wang Y. – Page 4 – TechConnect Briefs

A Carrier Based Analytic Model for Undoped Surrounding-Gate MOSFETs

He J., Zhang X., Chan M., Wang Y., Peking University, CN

A carrier-based analytic DCIV model for the undoped cylindrical surrounding-gate MOSFETs is presented in this paper. It is based on an exact solution of the Poisson equation and a Pao-Sah current formulation in terms of [...]

Benchmark Tests on Conventional Surface Potential Based Charge-Sheet Models And the Advanced PUNSIM Development

He J., Song Y., Niu X., Zhang G., Zhang X., Zhang G., Zhang X., Huang R., Chan M., Wang Y., Peking University, CN

This paper reports the benchmark test results of surface potential solution, inversion charge and channel current calculation, and short-channel effect model of various surface based charge-sheet models and our PUNSIM development to breakthrough the drawbacks [...]

Mixed-Methodology-Based System-Level Simulation of Biochemical Assays in Integrated Microfluidic Systems

Wang Y., Bedekar A.S., Krishnamoorthy S., Siddhaye S.S., Sundaram S., CFD Research Corporation, US

While lab-on-a-chip (LoC) systems are increasingly used in the areas of genomics, proteomics and drug discovery, their efficient simulation and design at system-level continue to be a challenge. Experimental trial-and-error and multiphysics-based high fidelity computation [...]

Nano-Diamond compressibility at pressures up to 85 GPa

Pantea C., Zhang J., Qian J., Zhao Y., Migliori A., Grzanka E., Palosz B., Wang Y., Zerda T.W., Liu H., Ding Y., Stephens P.W., Botez C.E., Los Alamos National Laboratory, US

According to the core-shell model nanocrystals consist of a uniform core surrounded by a surface shell. Crystallographic structure of the surface shell is the same as that of the core but interatomic distances in the [...]

YAG:Ce3+ Nanophosphor Synthesized with Salted Sol-Gel Method

Jia D., Jia W., Shaffer C.V., Weyant J.E., Goonewardene A., Guo X., Guo X.Z., Wang Y., Guo X., Guo X.Z., Li K.K., Zou Y.K., Jia D., Jia W., Boston Applied Technologies, Inc., US

Nanophosphors of Y3Al5O12:Ce3+ (YAG:Ce) were synthesized with a salted sol-gel (SSG) method, in which water-Heptane solutions of certain inorganic salts were used along with traditional metal alkoxides precursors. YAG phase could be formed at a [...]

System Simulations of Complex Electrokinetic Passive Micromixers

Wang Y., Lin Q., Mukherjee T., Carnegie Mellon University, US

This paper presents a composable system simulation framework using an analog hardware description language implementing behavioral models for electrokinetic micromixers that are capable of accurately capturing the effects of mixer topology/geometry, flow ratio and material [...]

A Novel X-ray Microtomography System with High Resolution and Throughput

Wang Y., Duewer F., Kamath S., Scott D., Yun W., Xradia, Inc., US

X rays is ideally suited for non-destructively imaging micrometer and nanometer sized structures because of its large penetration depth and rich contrast mechanisms. In particular, projection-type x-ray microscopes are widely used in material science and [...]

Composable System Simulation of Dispersion in Complex Electrophoretic Separation Microchips

Wang Y., Lin Q., Mukherjee T., Carnegie Mellon University, US

This paper presents a composable system simulation framework for electrophoretic separation microchips, using an analog hardware description language integrating analytical dispersion models that describe not only the behavior of individual components, but also the interactions [...]

Low Temperature Electronic Properties of Electrospun PAN-Derived Carbon Nanofiber

Wang Y., Santiago-Aviles J.J., University of Pennsylvania, US

The possible sensor application of carbon nanofibers relies on the nanofibers electronic transport. This paper fabricated carbon nanofibers using electrostatic deposition and vacuum pyrolysis techniques. Scanning electron microscope (SEM) and scanning probe microscopes (SPM) images [...]

Modelling of Gain Control in SiGe HBTs and Si Bipolar Transistors by Ge Incorporation in the Polysilicon Emitter

Kunz V.D., de Groot C.H., Anteney I.M., Abdul-Rahim A.I., Hall S., Hemment P.L.F., Wang Y., Ashburn P., University of Southampton, UK

In SiGe HBTs high values of fT are achieved by using aggressive Ge profiles in the base. A side effect is very high gains, which can lead to a degradation of BVCEO. This paper investigates [...]