Liu Y. – Page 3 – TechConnect Briefs

Investigation of the Conductance of Silicon Nanowire Biosensors Using the 2D Drift-diffusion Model

Damodaran S., Vadivelmurugan S., Do Q.T., Heitzinger C., Liu Y., Klimeck G., Purdue University, US

DNA-FETs are DNA sensors consisting of a semiconductor transducer and a functionalized surface. Their device structure is similar to a MOSFET, but the gate has been replaced by the functionalized surface. Since DNA-FETs allow direct [...]

Effects of Scaling on Modeling of Analog RF MOS Devices

Liu Y., Cao S., Oh T.Y., Wu B., Tornblad O., Dutton R.W., Stanford University, US

This paper uses advanced TCAD tools—both IMF-based noise modeling and HB-based distortion modeling—to extract parameters of key importance in developing compact models. Additionally, the TCAD-based modeling provides insight into technology constraints that can potentially influence [...]

Device Parameter Extraction from Fabricated Double-Gate MOSFETs

Tsutsumi T., Liu Y., Nakagawa T., Sekigawa T., Hioki M., Suzuki E., Koike H., National Institute of Advanced Industrial Science and Technology (AIST), JP

Accurate spice simulation needs parameter extraction of the fabricated DG-MOSFETs with good electrical characteristics. However, it is very difficult to fabricate such good DG-MOSFETs, so that device parameter extraction of the fabricated DG-MOSFETs has been [...]

Mobility Extraction and Compact Modeling for FETs Using High-K Gate Materials

Dutton R.W., Liu Y., Choi C-H, Chen T.W., Stanford University, US

This simulation work discusses the impact of direct gate tunneling on effective mobility extraction methods, particularly the Inversion Charge Pumping (ICP) method proposed recently for transistors with high-k gate dielectrics. The valence-band electron gate tunneling [...]

Influence of Si Nanocrystal Distribution on Electrical Characteristics of MOS Structures

Liu Y., Chen T.P., Ng C.Y., Ding L., Nanyang Technological University, SG

In this work, Si nanocrystals with different distributions were embedded in the gate oxide with ion implantation technique. C-V and time-domain capacitance measurements were conducted to study the electrical characteristics of MOS structures. It is [...]

XPS Studies of Silicon Nanoclusters/Nanocrystals Embedded in SiO2 Matrix

Chen T.P., Liu Y., Nanyang Technological University, SG

In this work, X-ray photoelectron spectroscopy (XPS) is used to study the annealing effects on the chemical structures, depth profiling of the chemical states and core-level shifts of the Si nanocrystals in the Si-implanted SiO2 [...]

Optical Properties of Silicon Nanocrystals Embedded in SiO2 Matrix

Ding L., Chen T.P., Liu Y., Nanyang Technological University, SG

In this work, spectroscopic ellipsometry (SE), which is a nondestructive method, is employed to determine the optical constants (refractive index and extinction coefficient) and thus the dielectric functions of the isolated nc-Si with a mean [...]