Optical Properties of Silicon Nanocrystals Embedded in SiO2 Matrix

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In this work, spectroscopic ellipsometry (SE), which is a nondestructive method, is employed to determine the optical constants (refractive index and extinction coefficient) and thus the dielectric functions of the isolated nc-Si with a mean size of ~ 4nm embedded in a SiO2 matrix in the photon-energy range of 1.13 – 4.96 eV (or wavelengths of 250 – 1100 nm). It is shown that the optical properties of the nc-Si are well described by the F-B (Forouhi-Bloomer) model. A large band gap expansion (0.45 eV) is observed for the nc-Si, indicating a significant quantum confinement effect.

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Journal: TechConnect Briefs
Volume: 2, Technical Proceedings of the 2005 NSTI Nanotechnology Conference and Trade Show, Volume 2
Published: May 8, 2005
Pages: 46 - 49
Industry sector: Advanced Materials & Manufacturing
Topics: Nanoparticle Synthesis & Applications
ISBN: 0-9767985-1-4