Unified Length-/Width-Dependent Drain Current Model for Deep-Submicron MOSFETs

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The motivation of this work is to develop a unified geometry-dependent drain current (Ids) model for the entire range of drawn length (L) and drawn width (W) without binning, considering all important short-/narrow-channel effects including perpendicular-field mobility degradation, velocity saturation, source/drain series resistance, as well as channel-length modulation for all regions of operation. This has been achieved based on the ideas of the previous length-dependent Ids(L) model [1], which allows the unified Ids model to be extended to both length and width dimensions at various bias conditions

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Journal: TechConnect Briefs
Volume: 2, Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 2
Published: February 23, 2003
Pages: 342 - 345
Industry sector: Sensors, MEMS, Electronics
Topic: Compact Modeling
ISBN: 0-9728422-1-7