Gupta R.S. – TechConnect Briefs

Threshold Voltage Model of Hetero Gate Dielectric-Dual Material Gate-GAA-Tunnel FET

Madan J., Gupta R.S., Chaujar R., Delhi Technological University, IN

In this paper, a hetero gate dielectric, dual material gate, gate all around tunnel field effect transistor (HD-DMG-GAA-TFET) has been proposed. An analytical model for the same has been developed to examine the band to [...]

TCAD Analysis of Small Signal Parameters and RF Performance of Heterogeneous Gate Dielectric-Gate All Around Tunnel FET

Madan J., Gupta R.S., Chaujar R., Delhi Technological University, IN

In this paper the small signal parameters of n-type heterogeneous gate dielectric gate all around tunnel FET (n-type-HD-GAA-TFET) and n-GAA-TFET are analyzed in terms of parasitic capacitance and RF figure of merits (FOM)such as cut [...]

Physics based Analytical Model for a Pocket Doped p-n-p-n Tunnel Field Effect Transistor

Narang R., Saxena M., Gupta M., Gupta R.S., Gupta M., Gupta R.S., University of Delhi, South Campus, IN

Tunnel FET working on the principle of band-to-band tunneling mechanism has come up as a promising candidate with advantages of going below the limitation of 60mV/decade sub-threshold slope, and lower leakage current and thus capable [...]

Analytical Drain Current Model for Damaged Gate All Around (GAA) MOSFET Including Quantum and Velocity Overshoot Effects

Gautam R., Saxena M., Gupta M., Gupta R.S., Gupta M., Gupta R.S., University of Delhi, South Campus, IN

The Cylindrical Gate All Around (GAA) Nanowire MOSFET exhibits strong drive currents and reduced short channel effects due to enhanced gate control and high surface quality of NW channels [1]. Apart from short channel immunity, [...]

Linearity Performance Assessment of Nanoscale Gate Material Engineered Trapezoidal Recessed Channel (GME-TRC) MOSFET for RFIC design and Wireless application

Malik P., Chaujar R., Gupta M., Gupta R.S., Gupta M., Gupta R.S., Semiconductor Devices Research Laboratory, IN

In this work, an extended study of linearity behaviour of proposed Gate Material Engineered-Trapezoidal Recessed Channel(GME-TRC) MOSFET(Fig.1.) has been performed using ATLAS and DEVEDIT device simulators and the results so obtained are compared with Trapezoidal [...]

Microwave and RF Applications of Gate Material Engineered Trapezoidal Recessed Channel (GME-TRC ) MOSFET

Malik P., Chajaur R., Gupta M., Gupta R.S., Gupta M., Gupta R.S., Semiconductor Devices Research Laboratory, IN

In this paper, the RF performance for Gate Material Engineered-Trapezoidal Recessed Channel (GME-TRC ) MOSFET(Fig.1.) has been investigated and the results so obtained are compared with Trapezoidal Recessed Channel (TRC) MOSFET(Fig.1.), using device simulators; ATLAS [...]

Impact of Non-Uniformly Doped and Multilayered Asymmetric Gate Stack Design on Device Characteristics of Surrounding Gate MOSFETs

Kaur H., Kabra S., Haldar S., Gupta R.S., University of Delhi, IN

In the present work, a new structural concept, non-uniformly doped multilayered asymmetric gate stack (ND-MAG) surrounding gate MOSFET has been proposed and it has been demonstrated using analytical modeling and simulation that ND-MAG SGT leads [...]

Compact Analytical Threshold Voltage Model for Nanoscale Multi-Layered-Gate Electrode Workfunction Engineered Recessed Channel (MLGEWE-RC) MOSFET

Chaujar R., Kaur R., Saxena M., Gupta M., Gupta R.S., Gupta M., Gupta R.S., University of Delhi, IN

In this paper, compact analytical threshold voltage model for multi-layered-gate electrode workfunction engineered recessed channel (MLGEWE-RC) MOSFET is presented and investigated using ATLAS device simulator. The novel device continues merits of recessed channel and dual [...]

An Iterative Approach to Characterize Various Advanced Non-Uniformly Doped Channel Profiles

Kaur R., Chaujar R., Saxena M., Gupta R.S., University of Delhi, IN

Since past three decades, in the pursuit of superior performances relative to high-speed circuits and packing density, miniaturization of device dimensions has been adopted as a powerful tool. Gradually, as device feature sizes move into [...]

Linearity Performance Enhancement of DMG AlGaN/GaN High Electron Mobility Transistor

Kumar S.P., Agrawal A., Chaujar R., Gupta M., Gupta R.S., Gupta M., Gupta R.S., Semiconductor Device Research Laboratory, IN

HEMTs are promising devices for RF wireless communications. For wireless communication applications and RF circuit design, linearity is always one of the most important issues. This is because the devices used in the system may [...]