In this paper the small signal parameters of n-type heterogeneous gate dielectric gate all around tunnel FET (n-type-HD-GAA-TFET) and n-GAA-TFET are analyzed in terms of parasitic capacitance and RF figure of merits (FOM)such as cut off frequency and maximum oscillation frequency. The device performance is studied for various dielectric constants combinations. With the implementation of Hetero gate dielectric reduction of parasitic capacitance and enhancement in maximum oscillation frequency has been obtained. Due to reduced parasitic capacitance the active power dissipation of the device is reduced and simultaneously the response time will increase. Due to enhanced cut off frequency and maximum oscillation frequency the device can work at high frequency also.
Journal: TechConnect Briefs
Volume: 4, Advanced Manufacturing, Electronics and Microsystems: TechConnect Briefs 2015
Published: June 14, 2015
Pages: 189 - 192
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics