Compact Analytical Threshold Voltage Model for Nanoscale Multi-Layered-Gate Electrode Workfunction Engineered Recessed Channel (MLGEWE-RC) MOSFET

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In this paper, compact analytical threshold voltage model for multi-layered-gate electrode workfunction engineered recessed channel (MLGEWE-RC) MOSFET is presented and investigated using ATLAS device simulator. The novel device continues merits of recessed channel and dual material gate (DMG) architecture. It has been seen that MLGEWE-RC MOSFET exhibits significant enhancement in terms improved gate controllability over the channel, carrier transport efficiency and hence, the driving current and hot carrier effect immunity. Thus, MLGEWE-RC MOSFET design acts as an attractive solution for the ongoing integration process in analog design and high-speed integration circuits below the 65-nm technology node.

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Journal: TechConnect Briefs
Volume: 3, Nanotechnology 2008: Microsystems, Photonics, Sensors, Fluidics, Modeling, and Simulation – Technical Proceedings of the 2008 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: June 1, 2008
Pages: 873 - 876
Industry sector: Sensors, MEMS, Electronics
Topic: Compact Modeling
ISBN: 978-1-4200-8505-1