US – Page 476 – TechConnect Briefs

Hierarchical Representation and Simulation of Micromachined Inertial Sensors

Vandemeer J.E., Kranz M.S., Fedder G.K., Carnegie Mellon University, US

A circuit-level methodology for simulating micromachined inertial sensors based on a hierarchical representation of microelectromechanical systems (MEMS) is presented. In the NODAS methodology 2dal Design of Actuators and Sensors), microaccelerometers and microgyroscopes are designed as [...]

Analysis of Pressure Balanced MEMS Valves

Yang F., Kao I., SUNY-Stony Brook, US

Based on simple plate theory and the Bernoulli equation, the effect of fluid flow on the deformation of fluid driven MEMS diaphragm microvalve is investigated analytically and numerically. The static instability of such a microsystem [...]

Modeling 3-D Fluid Flow for a MEMS Laminar Proportional Amplifier

Athavale M.M., Li H.Y., Przekwas A.J., Piekarski B.H., Zeto R.J., Tenney S.M., CFD Research Corporation, US

Fluid flow in a microfluidic laminar proportional amplifier (LPA) was simulated using an advanced 3-D flow solver, CFD-ACE+. Pressure gains for single-stage and two-stage blocked output LPAs were calculated under a variety of flow conditions [...]

Computational Modeling of Microfluid Devices with Free Surface Liquid Handling

Yang H.Q., Przekwas A.J., CFD Research Corporation, US

Integrated Microfluidic Systems are the subject of great scientific and commercial interest for a wide range of applications, including the biomedical, environmental, automotive, aerospace, and defense. This paper presents the computational methodology used in the [...]

Squeeze Film Damping Effect on the Dynamic Response of a MEMS Torsion Mirror

Pan F., Kubby J., Peeters E., Tran A.T., Mukherjee S., XEROX, Xerox Wilson Research Center, US

Analytical formulae for the squeeze film darnping torque on a MEMS torsion mirror are derived based on series solutions to the linearized Reynold's equation. The derivation is carried out under the assumption that the angular [...]

A Surface Recombination Velocity Model for Liquid Flow in Microchannels

Zemel J.N., University of Pennsylvania and Scitefair International Inc, US

A number of years ago, Eyring introduced the free volume concept to explain why the viscosity of liquids decreased with increasing temperature while at the same time the density for most liquids also decreased (water [...]

Cellular Automata Studies of Vertical MOSFETs

Saraniti M., Wigger S., Zandler G., Formicone G., Goodnick S.M., Arizona State University, US

This paper presents an overview of the cellular automata (CA) method for semiconductor device simulation. The main advantages of the CA method over the Monte Carlo (MC) approach are presented, and limitations of its modeling [...]

A Physics-Based Characterized Model for an Ultrafast Planar Rectifier

Hossain Z., Fragale W., Simpson W., Dashney G., Motorola, Inc., US

This paper presents a characterized nodel for an ultrafast-recovery (UFR) rectifier based on the manufacturing processes and device structural geometry. The accuray of the developed model depends upon the proper selection of physical models and [...]

Hierarchical Approach to Simulation in a Vertical System for the TriCore Microcontroller

Salzmann C., Chesters E., Coelho P., Fu Y-C, Madala J., Reddy M., Wang F., Siemens Microelectronics, Inc., US

This paper describes a hiercihical functional verification system for a core-based system design which minimizes complexity in testbenches while maximizing flexibility in terms of number of clocks and system interfaces and reducing time-to-market. The verification [...]

The Influence of Space Quantization Effect on the Threshold Voltage, Inversion Layer and Total Gate Capacitance in Scaled Si-MOSFETs

Vasileska D., Ferry D.K., Arizona State University, US

We investigate the influence of poly-gate depletion on the inversion layer capacitance CinV, total gate capacitance CtOt and threshold voltage VT in scaled Si MOSFETs using both semiclassical (SC) and quantum-mechanical (QM) description of the [...]