US – Page 438 – TechConnect Briefs

Diffusion Mechanisms and Capture Radii in Silicon

Beardmore K., Windl W., Haley B.P., Gronbech-Jensen N., Motorola, US

We have calculated the capture radii for several defect pairs, consisting of dopants and point defects (interstitials I and vacancies V, in silicon. Interaction potentials for I-V, I-B, P-V, and As-V were calculated using the [...]

Introducing Monte Carlo Diffusion Simulation into TCAD tools

Strecker N., Moroz V., Jaraiz M., Avant!, US

Advantages and disadvantages of the alternative approaches to the dopant diffusion simulation are discussed. Complementary use of the Monte Carlo and continuum diffusion models is suggested. Application of the integrated commercially available process simulation tools [...]

Nanoworld Semiconductor Industry – State and Future Challenges of Technology Computer Aided Design

Puchner H., Cypress Semiconductor, US

Several application examples of nanoscale techniques used to influence or enhance the understanding of material properties as well as processing behavior are presented. We will also present a review of first principle density functional theory [...]

Spatially Resolved Electron Energy-Loss Spectroscopy, a Tool to Verify Electronic Structure Calculations in Nanostructured Materials

Duscher G., Plitzko J., Kisielowski C., Buzko R., Pennycook S.J., Pantelides S.T., North Carolina State University, US

Modern mcroscopy allows a direct comparison between experimental results and the atomic and electronic structure as obtained by state of the art ab-initio calculations. The phase reconstruction technique allows one to determine the positions of [...]

The Numerical Simulation of a Substractive Process for the Fabrication of 3-D Low Temperature Co-Fired Ceramics Packaging Structures and Devices: Jet Vapor Etching

Ramos I., García L., Furlan R., Santiago-Aviles J.J., Pereira M.T., University of Puerto Rico at Humacao, US

We applied numerical simulation in order to gain knowledge and insight into the physical processes associated with Jet Vapor Etching, a subtractive process used in the machining of Low Temperature Co-Fired Ceramic (LTCC) tapes. Also, [...]

Process and Device Calibration for 31/51nm NMOS/PMOS Devices fabricated by Direct Write E-Beam

Puchner H., Eib N., Kimball J., Mirabedini M., Haywood J., Aronowitz S., Cypress Semiconductor, US

In order to ensure predictability of process and device calibration tools, we manufactured CMOS devices with smallest end-of-line gate electrode dimensions of 31nm and 51nm by applying direct write e-beam lithography. A special test-chip was [...]

A Physically-Based Model for Oxidation in a Circular Trench in Silicon

Xu Y., Sudhama C., Hong S., Sellers J.A., Ambadi S., Kamekona K., Averett G., Ruiz B., Wan I., Cai W., Wu Y., Costa J.C., Davies R.B., ON Semiconductor, US

Oxidation in a circular trench is of relevance in several applications, including trench capacitors in memories. In this work a model for stress-dependent oxidation is presented. The model is based on modifications of the Deal-Grove [...]

Numerical Simulation of Superconformal Electrodeposition Using the Level Set Method

Wheeler D., Josell D., Moffat T.P., NIST, US

Damascene copper is rapidly replacing aluminum as the interconnect material of choice in silicon technology. The change is driven by the lower electrical resistivity of copper, which decreases power consumption and permits increased central processor [...]

The Level-Set Method for Modeling Epitaxial Growth

Ratsch C., Petersen M., Caflisch R.E., University of California, Los Angeles, US

A level-set model for the simulation of epitaxial growth is described. In this model, the motion of island boundaries of discrete atomic layers is determined by the time evolution of a continuous level-set funciton psi. [...]

Efficient Full-Wave Modeling of Electromagnetic Field Propagation Through Micro-Optical Link

Sikorski Z., Turowski M., Przekwas A.J., CFD Research Corporation, US

Low dimensions of contemporary micro-optics imply the necessity of inclusion of vector diffraction effects into optical models. Classical geometrical optics and Gaussian beam calculation approaches are too coarse approximations. They do not properly take into [...]