Process and Device Calibration for 31/51nm NMOS/PMOS Devices fabricated by Direct Write E-Beam

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In order to ensure predictability of process and device calibration tools, we manufactured CMOS devices with smallest end-of-line gate electrode dimensions of 31nm and 51nm by applying direct write e-beam lithography. A special test-chip was designed to accommodate the peculiarities of a direct write e-beam lithographys process. The devices were fabricated, measured and analyzed. Process and device calibration was carried out to calibrate the threshold vs. gate length characteristics.

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Journal: TechConnect Briefs
Volume: 1, Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems
Published: April 22, 2002
Pages: 442 - 445
Industry sector: Sensors, MEMS, Electronics
Topic: Modeling & Simulation of Microsystems
ISBN: 0-9708275-7-1