United States
Principles of Metallic Field Effect Transistor (METFET)
Rotkin S.V., Hess K., University of Illinois at Urbana-Champaign, Beckman Institute for Advanced Science and Technology, US
Field effect transistors in current use are semiconductor devices. The scaling trend to nanometer dimensions calls for ever higher doping and channel conductance of these devices. Ultimately one desires a conductance close to that of [...]