US – Page 320 – TechConnect Briefs

Fabrication of Bowtie Nano-Gap Structures by Electron Beam Lithography

Murali R., Walters E., Zaman F., Tabor C., Huang W., El-Sayed M., Meindl J.D., Georgia Tech, US

Metallic nano-particle pairs in close proximity to one another display surface-enhanced raman scattering (SERS). Single-molecule detection has been predicted to be possible thanks to SERS. The SERS enhancement is due an induced localized electric field [...]

Dip Pen Nanolithography®: A Maturing Technology for High-Throughput Flexible Nanopatterning

Haaheim J.R., Tevaarwerk E.R., Fragala J., Shile R., NanoInk Inc, US

Precision nanoscale deposition is a fundamental requirement for much of current nanoscience research. Further, depositing a wide range of materials as nanoscale features onto diverse surfaces is a challenging requirement for nanoscale processing systems. As [...]

Novel lithography technique using an ASML stepper/scanner for the manufacture of display devices in MEMS world

Best K., Raval P., Kappel N., Yang C., Wang M., Jeewakhan N., Prejda M., Kassekert K., Moore M., ASML USA, Inc - Special Applications, US

In the MEMS and MOEMS product world, manufacturer of display/micro-devices requires bonding of two wafers. The front side pattern of the top wafer needs to be aligned with aggressive overlay requirement with the remaining portion [...]

A unique opportunity for industrial scale fabrication of semiconductor nanowire-based devices

Nikoobkht B., National Institute of Standards and Technology, US

A method is developed which enables horizontal growth of semiconductor nanowires on predefined locations. In this architecture, despite most bottom-up approaches, there is no need for post-growth treatments and alignment of nanowires on a given [...]

InSb and GaInSb nanowires for thermoelectric applications

Ye Q.L., Scheffler R., Kumari J., Leverenz R., NASA Ames Research Center, US

One-dimensional III-V compound semiconductor nanowires are an important class of nanomaterials that possess unique structures, remarkable properties, and great potential in various applications. InSb represents the smallest band-gap III-V compound semiconductor (0.17 eV at room [...]

One-dimensional Phase-Change Nanowires for Information Storage Application

Sun X.H., Yu B., NASA Ames Research Center, US

The electrically operated phase-change random access memory (PRAM) features faster write/read, improved endurance, and much simpler fabrication as compared with the traditional transistor-based nonvolatile semiconductor memories. Low-dimensional phase-change materials in nanoscale dimensions offer advantages over [...]

Robust design of quantum potential profile for electron in semiconductor nanodevices

Zhang J., Kosut R., SC Solutions, US

In this paper we address the robust design of the quantum potential profile in a in semiconductor nanodevice to achieve a desired electron transmission coefficient vs. bias voltage characteristic despite uncertainty. We formulate an optimization [...]

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