A unique opportunity for industrial scale fabrication of semiconductor nanowire-based devices


Keywords: , , ,

A method is developed which enables horizontal growth of semiconductor nanowires on predefined locations. In this architecture, despite most bottom-up approaches, there is no need for post-growth treatments and alignment of nanowires on a given surface. In the presented method, sapphire substrate is patterned with gold catalyst using photolithography. After growth of nanowires, using a 2nd step of photolithography, electric contacts are placed precisely on nanowires. Using this technique, large scale electrically addressable nanowires and top-gated field effect nanowire transistors have been made and their electric transport properties have been measured.

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Journal: TechConnect Briefs
Volume: 1, Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 1
Published: May 20, 2007
Pages: 241 - 243
Industry sector: Advanced Materials & Manufacturing
Topics: Advanced Materials for Engineering Applications, Nanoparticle Synthesis & Applications
ISBN: 1-4200-6182-8