Unified Regional Approach to Consistent and Symmetric DC/AC Modeling of Deep-Submicron MOSFETs

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This paper presents our new developments of Xsim, a unified regional threshold-voltage-based model for deepsubmicron MOSFETs. New features include complete reformulation with bulk reference, including transverse electric field for effective mobility resulting in source–drain symmetry, [...]

Micromachined III-V Multimorph Actuator Model and Design using Simulated Annealing (SA)-Based Global Optimization

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A new AlAs/GaAs-based multimorph microactuator (Fig. 1) is designed and modeled for micro-opto-electro-mechanical systems (MOEMS) applications. As the piezoelectric-based III-V materials such as AlAs/GaAs have small piezoelectric constants, we have developed the Simulated Annealing (SA)-based [...]