NO – Page 2 – TechConnect Briefs

Design, development and testing of apparatus to study gas diffusion in nanochannels

Karakitsiou S., Eder S.D., Holst B., Hoffmann A.C., University of Bergen, NO

In this work an apparatus, designed to measure gas diffusion through nanochannels, is introduced. All calculations for the construction have been made for 2000 nanochannels with a diameter of 100 nm and a length of [...]

Design, development and testing of apparatus to study gas diffusion in nanochannels

Karakitsiou S., Eder S.D., Holst B., Hoffmann A.C., University of Bergen, NO

In this work an apparatus, designed to measure gas diffusion through nanochannels, is introduced. All calculations for the construction have been made for 2000 nanochannels with a diameter of 100 nm and a length of [...]

Ag Nanoparticles as Low Emissivity Coating Materials for Window Glazing Applications

Gao T., Jelle B.P., Norwegian University of Science and Technology, NO

We communicate here the application of Ag nanoparticles as low-e coating materials, which may bridge the vast effort on the synthesis of metallic nanoparticles and the great potential of improving the energy feature of building [...]

The Utilization of Electrochromic Materials for Smart Window Applications in Energy-Efficient Buildings

Jelle B.P., Gao T., SINTEF Building and Infrastructure / Norwegian University of Science and Technology (NTNU), NO

The utilization of electrochromic materials (ECM) and windows (ECW) for smart window applications in energy-efficient buildings has a large potential. The ECWs are able to regulate the solar radiation throughput by application of an external [...]

Properties of xYSZ nanoparticles and pellets with x varying from 1 to 15%

Suciu C., Dorolti E., Hoffmann A.C., University of Bergen, NO

Nanoparticles of oxides are used, among other things, for solid oxide fuel cells (SOFCs), where the use of yttria-stabilized zirconina nanoparticles in the inner region of the anode will increase the extent of the "triple-phase [...]

The High Performance Thermal Building Insulation Materials of Beyond Tomorrow – From Concept to Experimental Investigations

Jelle B.P., Gao T., Sandberg L.I.C., Tilset B.G., Grandcolas M., Gustavsen A., SINTEF Building and Infrastructure / Norwegian University of Science and Technology (NTNU), NO

A major key strategy to achieve energy-efficient buildings is the development of high performance thermal building insulation materials, also often called superinsulation. A possible and promising way to reach these advanced insulation materials is to [...]

The High Performance Thermal Building Insulation Materials of Beyond Tomorrow – From Concept to Experimental Investigations

Jelle B.P., Gao T., Sandberg L.I.C., Tilset B.G., Grandcolas M., Gustavsen A., SINTEF Building and Infrastructure / Norwegian University of Science and Technology (NTNU), NO

A major key strategy to achieve energy-efficient buildings is the development of high performance thermal building insulation materials, also often called superinsulation. A possible and promising way to reach these advanced insulation materials is to [...]

Analytical Surface Potential Calculation in UTBSOI MOSFET with Independent Back-Gate Control

Khandelwal S., Chauhan Y.S., Karim M.A., Venugopalan S., Sachid A., Niknejad A., Hu C., Norwegian University of Science & Technlogy, NO

An analytical method for calculation of front- and back-gate surface-potential in ultra-thin body SOI MOSFETs is presented. The method allows surface-potential calculation with independent back-gate control which is very important in these devices. The calculated [...]

Unified Modeling of Multigate MOSFETs Based on Isomorphic Modeling Principles

Fjeldly T.A., Monga U., Norwegian University of Science and Technology, NO

A compact, unified and analytical model is presented for the 3D electrostatics of nanoscale, multigate MOSFETs. The model is based on solutions of the 3D Laplace equation (subthreshold) and Poisson’s equation (above threshold), where suitable [...]

Compact Model for Intrinsic Capacitances in AlGaN/GaN HEMT Devices

Khandelwal S., Fjeldly T.A., NTNU, NO

We present a physics-based analytical compact model for intrinsic gate-source and gate-drain capacitances (CGS and CGD) in AlGaN/GaN HEMT these devices. The gate-channel capacitance Cch is derived from the unified 2-DEG charge density model developed [...]