JP – Page 19 – TechConnect Briefs

Simulation of Buffer-Related Current Slump in AlGaN/GaN HEMTs

Horio K., Shibaura Institute of Technology, JP

Transient simulations of AlGaN/GaN HEMTs are performed in which a three-level compensation model is adopted for a semi-insulating buffer-layer, where a shallow donor, a deep donor and a deep acceptor are considered. Quasi-pulsed I-V curves [...]

HiSIM- Replacement of BSIM4 in UDSM Circuit Simulations

Iino Y., Pesic I., Silvaco Japan, JP

This paper presents HiSIM speed and convergence advantage against BSIM4 and PSP on a large variety of circuits such as memories, MPUs, PLLs, A/D and D/A converters, mixers etc.

Transition Point Consideration for Velocity Saturating Four-terminal DG MOSFET Compact Model

Nakagawa T., Sekigawa T., Tsutsumi T., Hioki M., O’uchi S., Koike H., AIST, JP

We have proposed a compact model for four-terminal DG MOSFETs based on double charge-sheet model, with the velocity saturation effect as a function of carrier density profile inside the channel, with explicit handling of drain [...]

HiSIM-Varactor: Complete Surface-Potential-Based Model for RF Applications

Miyake M., Sadachika N., Matsumoto K., Navarro D., Ezaki T., Miura-Mattausch M., Mattausch H.J., Miura-Mattausch M., Ohguro T., Iizuka T., Taguchi M., Miyamoto S., Hiroshima University, JP

For RF-circuit analysis, an accurate compact model for the MOS varactor is urgently desired. We have developed such an accurate MOS varactor model HiSIM-Varactor based on the surface-potential MOSFET model HiSIM. HiSIM-Varactor includes the majority [...]

HiSIM2.4.0: Advanced MOSFET model for the 45nm Technology Node and Beyond

Miura-Mattausch M., Sadachika N., Miyake M., Navarro D., Ezaki T., Mattausch H.J., Miura-Mattausch M., Ohguro T., Iizuka T., Taguchi M., Miyamoto S., Inagaki R., Furui Y., Hiroshima University, JP

HiSIM realizes both accurate and fast circuit simulation. The newly developed HiSIM2.4.0 includes required features in modeling for the 45nm technology node and beyond such as the STI stress effect. A major development is an [...]

Shear Piezoresistance Coefficient Pi44 of n-type Silicon

Kanda Y., Matsuda K., Kojundo Chemical Laboratory Co. LTD, JP

The PR in silicon has been widely used in the framework of micro-electro mechanical systems (MEMS). Origin of the shear PR effect even in n-type Si was not always explained completely in despite of simpler [...]

DNA Detection Using Metal-Fluorescence Interactions on Two-Dimensionally Assembled Gold Nanoparticles

Nakahara M., Taniguchi S., Inoue T., Hitachi Ltd., JP

We developed a novel DNA detection system using a single stranded probe oligonucleotide with a fluorophore immobilized on two-dimensionally assembled gold nanoparticles. This system enables the detection of amplified DNAs without fluorescence labeling. In the [...]

High-sensitive Label-free Biosensors Based on Carbon Nanotube Field-effect Transistors Modified with Aptamers

Maehashi K., Katsura T., Matsumoto K., Kerman K., Takamura Y., Tamiya E., Osaka University, JP

We have fabricated label-free protein biosensors based on aptamer-modified carbon nanotube field-effect transistors (CNTFET) for detection of immunoglobulin E (IgE). Since aptamers are artificial oligonucleotides, the aptamers are smaller in size than the Debye length. [...]

Synthesis of fullerene nanotubes by liquid-liquid interfacial precipitation method in the system of C60-pyridine and isopropyl alcohol

Ringor C., Miyazawa K., National Institute for Material Science, JP

Nanotubes composed of C60 molecules were prepared at ambient pressure and temperature by modified liquid-liquid interfacial precipitation method using pyridine for the solvent of C60 powder and isopropyl alcohol (IPA). Various parameters, such as ratio [...]

TEM and Raman Spectroscopy Analyses of Fullerene Nanowhiskers and Nanotubes

Miyazawa K., Ringor C., Nakamura K., Nakamura S., Tachibana M., Mashino T., Nakamura K., Nakamura S., National Institute for Materials Science, JP

Structure of the nanowhiskers and nanotubes composed of C60 molecules and C60 derivative molecules are examined by use of Raman spectroscopy and transmission electron microscopy (TEM). The C60 nanotubes (C60NTs) dried in air exhibited a [...]