JP – Page 16 – TechConnect Briefs

Multi-level Computational Chemistry Approach for Phase Change Behavior of Water induced by Laser Irradiation

Takaba H., Nomura A., Sasaki Y., Chiba K., Hata H., Hatakeyama N., Okushi K., Suzuki A., Tsuboi H., Koyama M., Hatakeyama N., Endou A., Kubo M., Delcarpio C.A., Kitada M., Kabashima H., Miyamoto A., Tohoku University, JP

Recently, laser irradiation involving chemical reaction is particularly interesting in the field related to high-technology material design. In this study, a phenomenon of rapid boiling water induced by infrared laser irradiation was investigated by means [...]

Preparation and characterization of electrospun nickel oxide/polymer fibrous electrodes for electrochemical capacitor

Tsutsumi H., Hosogai S., Yamaguchi University, JP

Electrospinning provides a simple and unique technique for preparation of fibers with the diameters ranging from the nano- to microscale. We prepared the electrospun fiber which contains nickel oxide (NiO) as the electrochemical active material [...]

Structural Stability of Hydrogen Storage Materials

Katagiri M., Onodera H., Ogawa H., National Institute for Materials Science, JP

Elastic instability by hydrogenation and hydrogen diffusion are studied by molecular dynamics method. The bulk modulus instability causes the anorphization by hydrogenation. The atomic relaxation reduces the pressure fluctuation terms i n the elastic constant, [...]

Study on the Cathode Materials for Achieving IT-SOFC with Proton Conductor

Asamoto M., Miyake S., Yonei Y., Yamaura H., Yahiro H., Ehime University, JP

Proton conductor is the potential candidate as an electrolyte for an intermediate temperature-solid oxide fuel cell (IT-SOFC). However, a major issue with the reduced operating temperature is the decrease in the catalytic activity of the [...]

Computer Simulation of Hydrogen Storage Materials

Katagiri M., Onodera H., Ogawa H., National Institute for Materials Science, JP

We develope a new software to design the hydrogen storage materials. The energetic and dynamical behavior of the materials are studied. As an example, we illustrate the amorphization process of intermetallics by hydrogenation, i.e. hydrogen [...]

New Catalytic system for Producing Pure Hydrogen -Water-gas-shift Reaction of Supported Copper Catalysts-

Yahiro H., Saiki K., Yamamoto T., Sagata K., Asamoto M., Yamaura H., Ehime University, JP

The catalytic activity of water-gas-shift (WGS) reaction was investigated for alumina-supported copper and copper-iron oxides catalysts calcined at different temperatures. Alumina-supported copper catalysts calcined at 1073 K, followed by the treatment in H2 at 523 [...]

HiSIM-HV: a complete surface-potential-based MOSFET model for High Voltage Applications

Oritsuki Y., Yokomiti M., Sakuda T., Sadachika N., Miyake M., Kajiwara T., Feldmann U., Mattausch H.J., Miura-Mattausch M., Miura-Mattausch M., Hiroshima University, JP

We present here the high-voltage MOSFET model HiSIM-HV based on the complete surface-potential description. The model is valid both for symmetrical and asymmetrical structures with scaling properties for any structural variations valid for wide range [...]

Comparison of Four-terminal DG MOSFET Compact Model with Thin Si channel FinFET Devices

Nakagawa T., Sekigawa T., Tsutsumi T., Liu Y., Hioki M., O’uchi S., Koike H., Electroinformatics Group, JP

We have proposed a compact model for four-terminal double-gate MOSFETs based on double charge-sheet model. The model can handle asymmetric gate structure such as different gate-oxide thickness, as well as independent gate voltage for two [...]

Modeling of Floating-Body Devices Based on Complete Potential Description

Sadachika N., Murakami T., Ando M., Ishimura K., Ohyama K., Miyake M., Mattausch H.J., Miura-Mattausch M., Miura-Mattausch M., Hiroshima University, JP

Advanced MOSFETs exploit the carrier confinement to suppress the short-channel effect, which is realized by reducing the bulk layer thickness. The ongoing developments of the multi-gate MOSFET as well as the fully-depleted SOI-MOSFET with ultra [...]

Construction of a Compact Modeling Platform and Its Application to the Development of Multi-Gate MOSFET Models for Circuit Simulation

Miura-Mattausch M., Chan M., He J., Koike H., Mattausch H.J., Miura-Mattausch M., Nakagawa T., Park Y.J., Tsutsumi T., Yu Z., Hiroshima University, JP

We are reporting the construction of a common platform for compact model development based on the Verilog-A language and in particular a framework for efficient development of multi-gate MOSFET models for circuit simulation. Phenomena expected [...]