FR – Page 16 – TechConnect Briefs

Atomic scale dopant detection in an individual silicon nanowire by atom probe tomography

Chen W-H, Lardé R., Cadel E., Xu T., Grandidier B., Nys J.P., Pareige P., Groupe de Physique des Matériaux, FR

The atom probe tomography is a three-dimensional high resolution analytical microscope that can map the distribution of atoms in semiconductor materials such as silicon nanowires.

1/f Noise Modeling at Low Temperature with the EKV3 Compact Model

Martin P., Ghibaudo G., CEA/LETI/MINATEC, FR

Advanced compact models are mandatory for simulation of mixed analog-digital circuits working at low temperature (77-200 K). In this work, the 1/f noise model introduced in the EKV3 model is evaluated. This evaluation is performed [...]

PSP Model Equations Extension for Statistical Estimation of Leakage Current in Nanometer CMOS Technologies Considering Process Variations

D’Agostino C., Flatresse P., Beigne E., Belleville M., STMicroelectronics, FR

A novel analytical methodology is proposed for statistical leakage estimation of CMOS circuits considering statistical process variations. The goal of the proposed methodology is to obtain a time-efficient and accurate estimation of the PDF of [...]

Country: FR

Atomic scale dopant detection in an individual silicon nanowire by atom probe tomography

1/f Noise Modeling at Low Temperature with the EKV3 Compact Model

PSP Model Equations Extension for Statistical Estimation of Leakage Current in Nanometer CMOS Technologies Considering Process Variations

Analytical Modelling of Ballistic and Quasi-Ballistic Nanowires:Validation and Application to CMOS Architecture

Embedded non–volatile memory study with surface potential based model

Design and Fabrication of Electromechanical Tweezers based on CNT Ropes

On the behavior of non-Newtonian fluids in microsystems for biotechnology

Performance study of Ballistic and Quasi-Ballistic on Double-Gate MOSFETs 6T SRAM cell

Sacrificial membranes for serial valving in microsystems