PSP Model Equations Extension for Statistical Estimation of Leakage Current in Nanometer CMOS Technologies Considering Process Variations

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A novel analytical methodology is proposed for statistical leakage estimation of CMOS circuits considering statistical process variations. The goal of the proposed methodology is to obtain a time-efficient and accurate estimation of the PDF of the leakage current of a complete digital circuit, without using time consuming Monte-Carlo simulations. The methodology consists mainly in the integration of probability equations directly into the PSP model

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Journal: TechConnect Briefs
Volume: 3, Nanotechnology 2009: Biofuels, Renewable Energy, Coatings, Fluidics and Compact Modeling
Published: May 3, 2009
Pages: 620 - 623
Industry sector: Sensors, MEMS, Electronics
Topic: WCM - Compact Modeling
ISBN: 978-1-4398-1784-1