BR – Page 10 – TechConnect Briefs

Study of Bioactive Films Using Natural Macromolecules

Ferreira M., Zucolotto V., Mulato M., Oliveira Jr O.N., FFCLRP-USP, BR

The control of interactions between living cells and modified surfaces is important for tissue engineering and may assist in the fabrication of bioactive coatings. Here we investigated the attachment of fibroblasts cells on bio-surfaces fabricated [...]

Theory, Development and Applications of the Advanced Compact MOSFET (ACM) Model

Galup-Montoro C., Schneider M.C., Cunha A.I.A., Gouveia-Filho O.C., Universidade Federal de Santa Catarina, BR

This paper presents a physics-based advanced compact MOSFET (ACM) model. The ACM model is composed of very simple expressions, valid for any inversion level, conserves charge and preserves the source-drain symmetry of the transistor. We [...]

Unambiguous Extraction of Threshold Voltage Based on the Transconductance-to-Current Ratio

Cunha A.I.A., Schneider M.C., Galup-Montoro C., Caetano C.D.C., Machado M.B., Federal University of Santa Catarina, BR

This paper presents a very simple methodology for determining the threshold voltage. The procedure is based on the expressions of the Advanced Compact MOSFET (ACM) model, valid in all regimes of operation, which assures physical [...]

Extraction of Mosfet Effective Channel Length and Width Based on the Transconductance-To-Current Ratio

Cunha A.I.A., Schneider M.C., Galup-Montoro C., Caetano C.D.C., Machado M.B., Federal University of Santa Catarina, BR

This paper presents a very simple methodology for determining the effective channel length and width, which is independent of the determination of the threshold voltage. The procedure is based on measurement of the transconductance-to-current ratio [...]

Analog Design Tool based on the ACM model

Galup-Montoro C., Schneider M.C., dos Reis Machado C., Universidade Federal de Santa Catarina, BR

This paper presents MOSVIEW, a software tool for transistor-level analog design, which is based on the Advanced Compact MOSFET (ACM) model [1, 2], derived from physics. This tool allows rapid exploration of the design space. [...]

All-Region MOS Model of Mismatch due to Random Dopant Placement

Klimach H., Galup-Montoro C., Schneider M.C., Universidade Federal de Santa Catarina, BR

Electron device matching has been a key factor on the performance of today’s analog or even digital electronic circuits. This paper presents a study of drain current matching in MOS transistors. A model for MOS [...]

Comparison of Surface Potential and Charge-based MOSFET Core Models

Galup-Montoro C., Schneider M., Pahim V.C., Rios R., Universidade Federal de Santa Catarina, BR

Since the next generation MOSFET model will be based on either surface potential or inversion charge, a comparison between the two approaches is timely. In this paper, we will analyze in some detail the fundamentals [...]

Y-nano X-micro Technologies: nanometric optical control

de Lima Monteiro D.W., Honorato F.P., Ferreira Jr A.I., Soloviev O., Vdovin G., Loktev M., Federal University of Minas Gerais, BR

Nanometric control of optical quality is relevant in many different fields, ranging from Ophthalmology to Lithography, where ordinary setups suffer from optical aberrations. Most common aberrations feature amplitudes in the nanometer range and are often [...]

Surface Roughness as a Function of the DLC Thickness Coating

Salvadori M.C., Martins D.R., Cattani M., University of Sao Paulo, BR

In this work we have analyzed the evolution of surfaces roughness coated with DLC. This study explores substrates with initial roughness (rms) between hundreds of nanometers and just few nanometers. We have used three substrates, [...]

Effects of the Process Parameters on the Carbon Nanotubes Growth by Thermal CVD

Verissimo C., Moshkalyov S.A., Ramos A.C.S., Gonçalves J.L., Alves O.L., Swart J.W., CCS - UNICAMP, BR

Carbon nanotubes growth was performed by thermal chemical vapor deposition using a tubular furnace and methane as carbon feedstock gas. Thin films of nickel were employed as catalysts supported onto a SiO2/Si substrate. The influence [...]