Quantum Effects, Quantum Devices and Spintronics

Simulation of Wigner Function Transport in Tunneling and Quantum Structures

Jacoboni C., Bertoni A., Bordone P., Giacobbi N., University of Modena, IT

The Wigner-function approach to quantum transport in mesoscopic electron devices is presented. The concept of Wigner paths allows the formulation of a Monte Carlo simulation which is quantum mechanically rigorous and yet very similar to [...]

The Use of a Green’s Function Formalism for the Simulation of Semiconductor Device Performance

Jovanovic D., Motorola, US

Non-equilibrium quantum transport simulation techniques (e.g. the generalized Kadanoff-Baym approach) have been in existence for over 40 years but have only recently become numerically viable for the simulation of semiconductor devices. This paper reports on [...]

Self-consistent Modeling of Open Quantum Devices

Akis R., Shifren L., Ferry D.K., Arizona State University, US

In this paper, we describe a method of simulating electron transport in semiconductor devices that operate in the quantum regime. Specifically, devices formed in which the electrons are confined to two dimensions (2D) and transport [...]

The Landauer Approach to the Critical Source-Channel Barrier in MOSFETs

Lundstrom M., Rhew J-H., Purdue University, US

A simple treatment of the nano-scale MOSFET in the spirit of the Landauer approach to transport in mesoscopic structures is described. First, the essential physics is illustrated by examining numerical simulations. Next, the analytical theory [...]

The Use of Quantum Potentials for Confinement in Semiconductor Devices

Asenov A., Brown A.R., Watling J.R., Glasgow University, UK

As MOSFETs are scaled into sub 100 nm (decanano) dimensions, quantum mechanical confinement and tunnelling start to dramatically affect their characteristics. In this paper we describe the introduction of quantum corrections within a 3D drift [...]

Predictive Process Simulation and Ab-initio Calculation of the Physical Volume of Electrons in Silicon

Windl W., Daw M.S., Ohio State University, US

Recently, we have presented the development of a complete predictive simulation capability for the effects of general anisotropic nonuniform stress on dopant diffusion in silicon [M. Laudon, N. N. Carlson, M. P. Masquelier, M. S. [...]

Electronic Structure of Quantum Dots

Hines C., McCarthy S.A., Wang J.B., Abbott P.C., The University of Western Australia, AU

This paper presents a detailed calculation of the electronic structure of quantum dots with various geometries. In particular, non-circular quantum dots are examined and their characteristic properties analysed. In addition, the importance of electron-electron spin [...]

Modeling and Simulation of Single-Electron Multi Tunnel Junction Memory

Le Carval G., Le Royer C., Le Carval G., Le Royer C., Sanquer M., Fraboulet D., CEA-LET, FR

For optimization of Quantum-Dot-based Multi Tunnel Junction Memory (MTJM) [1], we propose an original compact model validated by physical simulations. We analyze the impact of physical and technological parameters (Temperature, dots density, geometries…) on writing [...]

Modelling Coupled Motion of Electrons in Quantum Dots with Wetting Layers

Melnik R.V.N., Willatzen M., University of Southern Denmark, DK

The influence of wettin-layer states on quantum-dot states and vice-versa is examined numerically employing a one-band model for electroncs in the conduction band. This problem corresponds to the case where a few monolayer InAs grown [...]

Principles of Electron Wave Computing using Quantum Resistor Networks

Wu C.H., University of Missouri-Rolla, US

Quantum resistor networks are interconnected thin wires or electron conducting wave guides. A multiple input-output quantum network is capable of performing massive parallel computing, similar to optical computing. Basic logic functions and arithmetic computation have [...]

Electron Vorticity – Internal Energy Formulation of the Hydrodynamic Model of Electron Transport

Mohseni K., Shakouri A., University of Colorado, US

The hydrodynamic model of electron transport is revisited. By rearranging the governing equations a new set of equations in terms of the electron vorticity and internal energy is derived. The advantage of the new set [...]

Quantum Effects in SOI Devices

Ahmed S.S., Akis R., Vasileska D., Arizona State University, US

Quantum effects have been reported to play an important role in the operation of narrow width SOI devices, in which the carriers experience a two dimensional confinement in a square quantum well at the semiconductor-oxide [...]

Residual Stress Modeling in Quantum Dots

Vlahovic B., Wang K., Suslov V., Yakovlev S.L., Otieno C., Soldi A., Dutta J., North Carolina Central University, US

One of the possible applications of the quantum dots is in a new generation of photovoltaic cells. Theory predicts the efficiency of these based solar cells to be up to 63 percent, which is substantially [...]

Computing Excitons in V-shaped Quantum Wires Including Band-Structure and Dielectric Effects : Binding energies and polarization anisotropy of the bright A1, B1, A2 excitons

Dupertuis M.A., Oberli D.Y., Kapon E., Swiss Federal Institute of Technology-EPFL, CH

We demonstrate an efficient numerical scheme for the computation of the excitonic optical response of actual GaAs/AlGaAs quantum wire structures including a large set of relevant effects; structural, valence band-mixing, dielectric and many-body effects can [...]

Gain in a Semiconductor Waveguide Qubit

Harris J., Akis R., Ferry D.K., Arizona State University, US

Recently, it has been suggested that it may be possible to use combinations of coupled quantum wire waveguides to form quantum computational qubits [1],[2]. However, there are several related problems intrinsic to this approach. First, [...]

Binding Energy of an Exciton Bound to a Charged Impurity in Quantum Dots

Xie W., Guangzhou University, CN

Binding energies for an exciton (X) trapped in the two-dimensional quantum dot by a charged impurity located on the z axis at a distance from the dot plane are calculated using the method of few-body [...]

A Systematic Search for New Scintillators using Electronic Structure Calculations

Klintenberg M., Derenzo S.E, Weber M.J., Lawrence Berkeley National Laboratory, US

A systematic study of several hundred inorganic crystal structures have been performed by means of electronic structure calculations with the goal of finding potential new scintillator materials for synthesis and testing. All X-ray or neutron [...]

Computer Simulation of Electron Energy States for Three-Dimensional InAs/GaAs Semiconductor Quantum Rings

Li Y., Voskoboynikov O., Lee C.P., National Nano Device Laboratories, TW

In this article we study the electron energy states for three-dimensional (3D) semiconductor quantum rings. Our model formulation includes: (i) the effective one-band Hamiltonian approximation, (ii) the position and energy dependent quasi-particle effective mass approximation, [...]

Papers: