Computer Simulation of Electron Energy States for Three-Dimensional InAs/GaAs Semiconductor Quantum Rings

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In this article we study the electron energy states for three-dimensional (3D) semiconductor quantum rings. Our model formulation includes: (i) the effective one-band Hamiltonian approximation, (ii) the position and energy dependent quasi-particle effective mass approximation, (iii) the finite hard wall confinement potential, and (iv) the Ben Daniel-Duke boundary conditions. We solve the 3D model by nonlinear iterative algorithm to obtain self-consistent solutions. The model and simulation provide a novel way to calculate the energy levels of nano-scopic semiconductor quantum ring. They are useful to clarify the principal dependencies of quantum ring energy states on material band parameter, ring size and shape.

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Journal: TechConnect Briefs
Volume: 1, Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems
Published: April 22, 2002
Pages: 540 - 543
Industry sector: Sensors, MEMS, Electronics
Topics: Modeling & Simulation of Microsystems
ISBN: 0-9708275-7-1