Papers – Page 80 – TechConnect Briefs

Another Look at Organic/Metal Interfaces: Correlation with Experiment

Mitrasinovic P.M., Center for Multidisciplinary Studies, University of Belgrade, YU

A general methodology for the determination of the nature of the interfacial interactions is proposed by investigating the changes of the organic/metal bond critical parameters as consequences of both increasing the size and changing the [...]

N-channel Single Crystal Si Nanoparticle Schottky Barrier Transistor

Song S.H., Ding Y., Kortshagen U., Bapat A., Campbell S.A., University of Minnesota, US

A novel process has been developed by when large (~40 nm) cubic single crystals of silicon can be produced at high rates. In a previous paper we demonstrated that these particles can be used to [...]

1/f Noise and RTS(Random Telegraph Signal) Errors in Comparators and Sense Amplifiers

Forbes L., Miller D.A., Poocharoen P., Oregon State University, US

An analysis has previously been made of the increasing portion of the threshold voltage being occupied by thermal noise levels and the bit error rates in digital logic[1] and memory circuits [2-4]. This analysis has [...]

High Frequency Characteristics of Nanoscale Silicon Nanowire FET

Li Y., Hwang C-H, National Chaio Tung University, TW

Nanoscale multigate field effect transistors (FETs) are potentially next-generation device candidates for achieving the high performance targets of the ITRS due to their superior reduction of the short channel effects and excellent compatibility with planar [...]

Random Discrete Dopant Fluctuated Sub-32 nm FinFET Devices

Li Y., Hwang C-H, Yu S-M., Huang H.M., Chen H-M, National Chaio Tung University, TW

Scaling of silicon production technology has approached the sub-65nm regime. Device’s electrical characteristics fluctuate according to the discreteness and randomness of dopants in sub-32nm technologies. In this paper, we investigate the random-dopant-induced electrical characteristics fluctuations, [...]

Silicon Nanoparticles contacted by metal nanogaps for FET applications

Wolff K., Hilleringmann U., University of Paderborn, DE

A low-cost and simple fabrication technique is proposed to prepare a bottom-gate FET applying nanoparticles of silicon (nc-Si). Nanoparticles were contacted by metal nanogaps and characterised subsequently. Conclusions of contacting incorporated into further approaches of [...]

Optimization and Examination of Device Characteristics Due to Process Variation in 10 nm FinFET Using Fully Self-Consistent Quantum Mechanical Simulator

Khan H., Mamaluy D., Vasileska D., Arizona State University, US

We use Contact Block Reduction (CBR)method to investigate the critical issues relating optimization of device performance in 10 nm FinFET operating in ballistic regime. The goal of this work is to achieve the desired values [...]

Fabrication of Light Emitting Diodes Using Nano-Porous Silicon Thin Films

Jamei M., Fallah B., Mohajerzadeh S., Karbassian F., Abdi Y., Koohsorkhi J., Robertson M.D., Yuill S., Acadia University, CA

A novel approach for the fabrication of light-emitting diodes based on nano-porous silicon films is reported. The objective of this work was the creation of an efficient light emitter based on existing silicon technologies in [...]

An Integrate and Fire Spiking Neuron Using Silicon Nano-Wire Technology

Bindal A., Hamedi-Hagh S., San Jose State University, US

This study presents a nanometer-scale Integrate and Fire Spike (IFS) neuron cell using vertically-grown, undoped silicon nano-wire transistors. The design cycle starts with determining individual metal gate work functions for each NMOS and PMOS transistor [...]

Synthesis and Thin-Film Transistor Performance of Fluorene-based Copolymers Containing Thiophene Moieties Having Different Position of Alkyl Side Chain

Kong H.Y., Lim E., Jung Y.K., Park M.-J., Ahn T., Yi M.H., Kang I.-N., Shim H.-K., KAIST, KR

We have synthesized fluorene-based copolymers (PF-HT-TT-TH and PF-TH-TT-HT) containing thiophene moieties having different position of alkyl side chain via the palladium-catalyzed Suzuki coupling reaction. The number-average molecular weight (Mn)s of PF-HT-TT-TH and PF-TH-TT-HT were respectively [...]